Disordered Materials (häftad)
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Format
Häftad (Paperback / softback)
Språk
Engelska
Antal sidor
410
Utgivningsdatum
1992-06-01
Upplaga
Softcover reprint of the original 1st ed. 1991
Förlag
Springer-Verlag New York Inc.
Medarbetare
Adler, David (red.)/Schwartz, Brian B. (red.)/Silver, Marvin (red.)
Illustrationer
268 Illustrations, black and white; 410 p. 268 illus.
Antal komponenter
1
Komponenter
1 Paperback / softback
ISBN
9781468487473

Disordered Materials

Science and Technology

av Stadford R Ovshinsky, David Adler, Brian B Schwartz, Marvin Silver
Häftad,  Engelska, 1992-06-01
1006
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Landmark contributions to science and mechanisms for the origin of the phenomena, and technology are rarely recognized at the time of reached important conclusions about the physical publication. Few people, even in technical areas, nature of the materials at equilibrium and their recogni zed the importance of developments such as electronic nonequilibrium properties. Many of these the transistor, the laser, or electrophotography ideas were condensed into a publication for Physical until well after their successful demonstration. Review Letters, paper 1 in this collection. This So-called experts, in fact, tend to resist new paper immediately attracted attention to the field, inventions, a natural instinct based on a combina and directly lead to the initiation of large research tion of fear of obsolescent expertise and jealousy efforts at both industrial laboratories and univer- arising from lack of active participation in the ties throughout the world. Inevitably, there was discovery. the usual amount of controversy, with many experts Denigration of new ideas is a relatively simultaneously taking positions (2) and (3) above. safe modus operandi, since the vast majority It has now been well over 20 years since eventually are abandoned well short of commerciality. the original publication date, and an objective view However, a successful device can be identified by can be taken in hindsight.
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Innehållsförteckning

I: Chemistry and Physics of Disordered Materials.- 1. Reversible Electrical Switching Phenomena in Disordered Structures.- 2. Simple Band Model for Amorphous Semiconducting Alloys.- 3. Reversible Conductivity Transformations in Chalcogenide Alloy Films.- 4. Structural Studies of Amorphous Semiconductors.- 5. Reflectivity Studies of the Te(Ge,As)-based Amorphous Semiconductor in the Conducting and Insulating States.- 6. Analog Models for Information Storage and Transmission in Physiological Systems.- 7. Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors.- 8. Three Dimensional Model of Structure and Electronic Properties of Chalcogenide Glasses.- 9. Localized States in the Gap of Amorphous Semiconductors.- 10. Lone-Pair Relationships and the Origin of Excited States in Amorphous Chalcogenides.- 11. Chemical Modification of Amorphous Chalcogenides.- 12. Optical and Electronic Properties of Modified Amorphous Materials.- 13. Local Structure, Bonding, and Electronic Properties of Covalent Amorphous Semiconductors.- 14. A New Amorphous Silicon-Based Alloy for Electronic Applications.- 15. Threshold Switching in Chalcogenide Glass Thin Films.- 16. Properties of Amorphous Si:F:H Alloys.- 17. Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:H.- 18. The Nature of Intermediate Range Order in Si:F:H (P) Alloy Systems.- 19. Correlation Between the Superconducting and Normal State Properties of Amorphous Molybdenum-Silicon Alloys.- 20. Superconducting Properties of Amorphous Multilayer Metal-Semiconductor Composites.- 21. Superconducting Properties of Sputtered Mo-C Films with Columnar Microstructure.- 22. The Role of Free Radicals in the Formation of Amorphous Thin Films.- 23. Laser-Induced Fluorescence Detection of Reactive Intermediates in Diffusion Flames and in Glow-Discharge Deposition Reactors.- 24. Order Parameters in a-Si Systems.- 25. Passivation of Dangling Bonds in Amorphous Si and Ge by Gas Adsorption.- 26. Chemical Bond Approach to the Structures of Chalcogenide Glasses with Reversible Switching Properties.- 27. Critical Materials Parameters for the Development of Amorphous Silicon Alloys.- 28. Low Pressure Microwave Glow Discharge Process for High Deposition Rate Amorphous Silicon Alloy.- 29. Basic Anticrystalline Chemical Bonding Configurations and Their Structural and Physical Implications.- 30. Superconductivity at 155 K.- 31. Superconductivity in Fluorinated Copper Oxide Ceramics.- 32. A Structural Chemical Model for High Tc Ceramic Superconductors.- II: Device Applications.- 33. Reversible Structural Transformations in Amorphous Semiconductors for Memory and Logic.- 34. Radiation Hardness of Ovonic Devices.- 35. Reversible High-Speed High-Resolution Imaging in Amorphous Semiconductors.- 36. Reversible Optical Effects in Amorphous Semiconductors.- 37. Imaging in Amorphous Materials by Structural Alteration.- 38. New Thin-Film Tunnel Triode Using Amorphous Semiconductors.- 39. Mechanism of Reversible Optical Storage in Evaporated Amorphous AsSe and Ge10As40Se50 ?.- 40. Solar Electricity Speeds Down to Earth.- 41. Amorphous Photovoltaic Cells.- 42. Metal-Insulator-Semiconductor Solar Cells Using Amorphous Si:F:H Alloys.- 43. Progress in Large Area Photovoltaic Devices Based on Amorphous Silicon Alloys.- 44. Amorphous Photovoltaics.- 45. The Breaking of the Efficiency-Stability-Production Barrier in Amorphous Photovoltaics.- 46. Amorphous Semiconductors for Microelectronics.- 47. Effects of Transition-Metal Elements on Tellurium Alloys for Reversible Optical Data Storage.- III: Review Articles.- 48. The Ovshinsky Switch.- 49. An Introduction to Ovonic Research.- 50. Amorphous Semiconductors for Switching, Memory, and Imaging Applications.- 51. Amorphous Materials as Interactive Systems.- 52. Amorphous Materials as Optical Information Media.- 53. The Shape of Disorder.- 54. The Chemistry of Glassy Materials and Their Relevance to Energy Conversion.- 55. Principles

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