GaP Heteroepitaxy on Si(100) (inbunden)
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Format
Inbunden (Hardback)
Språk
Engelska
Antal sidor
143
Utgivningsdatum
2013-12-11
Upplaga
2013 ed.
Förlag
Springer International Publishing AG
Illustrationer
33 Illustrations, color; 47 Illustrations, black and white; XIV, 143 p. 80 illus., 33 illus. in colo
Dimensioner
234 x 155 x 13 mm
Vikt
363 g
Antal komponenter
1
Komponenter
1 Hardback
ISBN
9783319028798

GaP Heteroepitaxy on Si(100)

Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients

av Henning Dscher
Inbunden,  Engelska, 2013-12-11
1550
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Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
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Övrig information

Dr. Henning Dscher TU Ilmenau Institut fr Physik, FG Photovoltaik Ehrenbergstr. 29 98693 Ilmenau

Innehållsförteckning

Introduction.- Experimental.- Si(100) surfaces in chemical vapor environments.- GaP(100) and InP(100) surfaces.- GaP growth on Si(100) and anti-phase disorder.- Conclusion.

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