Ferroelectric-Gate Field Effect Transistor Memories

Byung-Eun Park received the B.S. and M.S. degrees from the University of Seoul, Korea, and the Ph.D. degree in applied engineering from the Tokyo Institute of Technology, Tokyo, Japan. He is a professor at School of Electrical and Computer Engineering, University of Seoul, Korea. Prior to joining the University of Seoul in 2004, he was an assistant professor in Tokyo Institute of Technology, and had joined the R&D Association for Future Electron Devices, Japan. He has over 250 patents including pending. Now, he is a non-executive director of Korea Intellectual Property Strategy Institute and a member of Compensation Council for duty invention of Seoul Metropolitan Government. His research interests are device and process technologies in ferroelectric memories. He also interests display devices, solar cells and sensors. Hiroshi Ishiwara was born in Japan in 1945. He received the B.S., M.S., and Ph.D. degrees in electronic engineering from Tokyo Institute of Technology, Tokyo, Japan, in 1968, 1970, and 1973, respectively. He was with the Tokyo Institute of Technology, as Research Associate (1973-1976), Associate Professor (1976-1989), and Professor (1989-2011). In 2004 and 2005, he was the Dean of professor at Interdisciplinary Graduate School of Science and Engineering. He retired from Tokyo Institute of Technology in 2011 and he is now a Professor Emeritus. In the period from 2010 to 2013, he was a WCU (World Class University) Professor in Department of Physics, Konkuk University, Korea. His research interests are device and process technologies in integrated circuits, particularly in ferroelectric memories. He has published 450 peer-reviewed papers with total citations more than 6000. Dr. Ishiwara was awarded the Japan IBM Science Prize in 1990, International Symposium on Integrated Ferroelectrics 2000 Honors, the Purple Ribbon Medal by Japanese Government in 2003, Certificate of Merit in Nano Research Innovation Category by Korean Deputy Prime Minister and Minister of Science & Technology in 2007, and SSDM (Solid State Devices and Materials) Award in 2008. He was the President of the Japan Society of Applied Physics (JSAP) in 2008 and 2009. He is fellows of IEEE (the Institute of Electrical and Electronics Engineers), MRS (Materials Research Society), IEICE (the Institute of Electronics, Information and Communication Engineers), and IEEJ (the Institute of Electrical Engineers of Japan), and an honorable member of JSAP. Masanori Okuyama is a Professor Emeritus and a Specially Appointed Professor of Institute for NanoScience Design at Osaka University. He has received the B. S., M. E. and D. E. degrees in electrical engineering from Osaka University, Japan in 1968, 1970 and 1973, respectively. He was a researcher of Japan Society for the Promotion of Science from 1973 to 1974, a Research Associate, the Faculty of Engineering Science, Osaka University from 1974 to 1986, an Associate Professor from 1986 to 1991 and a Professor from 1991 to 2009. His current interests are preparation and characterization of ferroelectric and dielectric thin films and their applications to electronic devices including nonvolatile memory, MOS structure, sensors and actuators. He is a President of The Society of Sensing Technology of Japan and a director of Japan Society of Next Generation Sensor Technology. He was a director of The Institute of Electrical Engineers of Japan and a director of The Japan Society of Applied Physics from 2006 to 2007. He is also an editor of Topics in Applied Physics Volumes 93 and 98, Springer. Shigeki Sakai received the B.S. degree in electric engineering, and M.S. and Ph. D. degrees in electronic engineering from the University of Tokyo in1974, 1976, and 1979, respectively. He is now the Invited Senior Researcher in National Institute of Advanced Industrial Science and Technology (AIST), and is also Guest Professor of Kanazawa Institute of Technology. He was the leader of the Ferroelectric Memory

Preface I. Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors II. Practical Characteristics of Inorganic Ferroelectric-gate FETs Si-Based Ferroelectric-gate Field Effect Transistors 1) Pt/SrBi2Ta2O9(SBT)/(Hf,SiO)2/Si gate structure Ferroelectric FETs 2) Pt/(SBT,BLT)/HfO2/Si gate structure Ferroelectric FETs Thin film-Based Ferroelectric-gate Field Effect Transistors 3) ITO/PZT/LaNiO3(LNO) gate structure Ferroelectric FETs 4) ZnO/Pb(Zr,Ti)O3 gate structure Ferroelectric FETs 5) Pt/PZT/ZnO gate structure Ferroelectric FETs III. Practical Characteristics of Organic Ferroelectric-gate FETs Si-Based Ferroelectric-gate Field Effect Transistors 1) Polyvinylidene fluoride (PVDF)/Si structure Ferroelectric-gate FETs 2) Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferroelectric-gate FETs Thin film-Based Ferroelectric-gate Field Effect Transistors 3) P(VDF-TrFE)/Pentacene structure Ferroelectric-gate FETs 4) P(VDF-TrFE)/oxide thin film structure Ferroelectric-gate FETs Ferroelectric-gate Field Effect Transistors with flexible substrates 5) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on plastic substrates 6) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on paper substrates IV. Applications and Future Prospects 1) Novel Applications to NAND-type Memory Circuits 2) Novel Applications to Non-memory Devices 3) Features of One-Transistor Type Ferroelectric-gate Field Effect Transistors