Claus F. Klingshirn – författare

This revised and updated edition of the well-received book by C. Klingshirn provides an introduction to and an overview of all aspects of semiconductor optics, from IR to visible and UV. It has been split into two volumes and rearranged to offer a clearer structure of the course content. Inserts on important experimental techniques as well as sections on topical research have been added to support research-oriented teaching and learning. Volume 1 provides an introduction to the linear optical properties of semiconductors. The mathematical treatment has been kept as elementary as possible to allow an intuitive approach to the understanding of results of semiconductor spectroscopy. Building on the phenomenological model of the Lorentz oscillator, the book describes the interaction of light with fundamental optical excitations in semiconductors (phonons, free carriers, excitons). It also offers a broad review of seminal research results augmented by concise descriptions of the relevant experimental techniques, e.g., Fourier transform IR spectroscopy, ellipsometry, modulation spectroscopy and spatially resolved methods, to name a few. Further, it picks up on hot topics in current research, like quantum structures, mono-layer semiconductors or Perovskites. The experimental aspects of semiconductor optics are complemented by an in-depth discussion of group theory in solid-state optics. Covering subjects ranging from physics to materials science and optoelectronics, this book provides a lively and comprehensive introduction to semiconductor optics. With over 120 problems, more than 480 figures, abstracts to each chapter, as well as boxed inserts and a detailed index, it is intended for use in graduate courses in physics and neighboring sciences like material science and electrical engineering. It is also a valuable reference resource for doctoral and advanced researchers.

This revised and updated edition of the well-received book by C. Klingshirn provides an introduction to and an overview of all aspects of semiconductor optics, from IR to visible and UV. It has been split into two volumes and rearranged to offer a clearer structure of the course content. Inserts on important experimental techniques as well as sections on topical research have been added to support research-oriented teaching and learning. 

Volume 1 provides an introduction to the linear optical properties of semiconductors. The mathematical treatment has been kept as elementary as possible to allow an intuitive approach to the understanding of results of semiconductor spectroscopy. Building on the phenomenological model of the Lorentz oscillator, the book describes the interaction of light with fundamental optical excitations in semiconductors (phonons, free carriers, excitons). It also offers a broad review of seminal research results augmented by concise descriptions of the relevant experimental techniques, e.g., Fourier transform IR spectroscopy, ellipsometry, modulation spectroscopy and spatially resolved methods, to name a few. Further, it picks up on hot topics in current research, like quantum structures, mono-layer semiconductors or Perovskites. The experimental aspects of semiconductor optics are complemented by an in-depth discussion of group theory in solid-state optics. 

Covering subjects ranging from physics to materials science and optoelectronics, this book provides a lively and comprehensive introduction to semiconductor optics. With over 120 problems, more than 480 figures, abstracts to each chapter, as well as boxed inserts and a detailed index, it is intended for use in graduate courses in physics and neighboring sciences like material science and electrical engineering. It is also a valuable reference resource for doctoral and advanced researchers.

This book provides an introduction to and an overview of the multifaceted area of dynamics and nonlinearities related to optical excitations in semiconductors. It is a revised and significantly extended edition of the well-established book by C. Klingshirn split into two volumes and restructured to make it more concise. Inserts on important experimental techniques, reference to topical research and novel materials, as well as consideration of photonic applications support research-oriented teaching and learning. This book reviews nonlinear optical properties and many-body phenomena evoked by high densities of quasi-particles in semiconductors. Coherent dynamics and relaxation of optical excitations (carriers, excitons, electron–hole plasmas, etc.) as well as condensation phenomena are elucidated in these materials. A broad overview is provided of seminal research results augmented by detailed descriptions of the relevant experimental techniques, e.g., ultrafastspectroscopy, four-wave mixing, and the Hanbury-Brown and Twiss experiment. Offering a comprehensive introduction to hot topics in current research — polariton condensates, valley coherence, and single photons, to name a few, it also discusses applications of the described physical concepts in topical areas, such as quantum information, photonics, spintronics, and optoelectronics.Covering subjects ranging from physics to materials science and optoelectronics, the book provides a lively and comprehensive introduction to semiconductor optics beyond the linear regime.With many problems, chapter introductions, schematic depictions of physical phenomena, as well as boxed inserts and a detailed index, it is suitable for use in graduate courses in physics and neighboring sciences like material science and optical communication. It is also a valuable reference resource for doctoral and advanced researchers.

This book provides an introduction to and an overview of the multifaceted area of dynamics and nonlinearities related to optical excitations in semiconductors. It is a revised and significantly extended edition of the well-established book by C. Klingshirn split into two volumes and restructured to make it more concise. Inserts on important experimental techniques, reference to topical research and novel materials, as well as consideration of photonic applications support research-oriented teaching and learning. This book reviews nonlinear optical properties and many-body phenomena evoked by high densities of quasi-particles in semiconductors. Coherent dynamics and relaxation of optical excitations (carriers, excitons, electron–hole plasmas, etc.) as well as condensation phenomena are elucidated in these materials. A broad overview is provided of seminal research results augmented by detailed descriptions of the relevant experimental techniques, e.g., ultrafastspectroscopy, four-wave mixing, and the Hanbury-Brown and Twiss experiment. Offering a comprehensive introduction to hot topics in current research — polariton condensates, valley coherence, and single photons, to name a few, it also discusses applications of the described physical concepts in topical areas, such as quantum information, photonics, spintronics, and optoelectronics.Covering subjects ranging from physics to materials science and optoelectronics, the book provides a lively and comprehensive introduction to semiconductor optics beyond the linear regime.With many problems, chapter introductions, schematic depictions of physical phenomena, as well as boxed inserts and a detailed index, it is suitable for use in graduate courses in physics and neighboring sciences like material science and optical communication. It is also a valuable reference resource for doctoral and advanced researchers.

This book provides an introduction to and an overview of the multifaceted area of dynamics and nonlinearities related to optical excitations in semiconductors. It is a revised and significantly extended edition of the well-established book by C. Klingshirn split into two volumes and restructured to make it more concise. Inserts on important experimental techniques, reference to topical research and novel materials, as well as consideration of photonic applications support research-oriented teaching and learning. This book reviews nonlinear optical properties and many-body phenomena evoked by high densities of quasi-particles in semiconductors. Coherent dynamics and relaxation of optical excitations (carriers, excitons, electron–hole plasmas, etc.) as well as condensation phenomena are elucidated in these materials. A broad overview is provided of seminal research results augmented by detailed descriptions of the relevant experimental techniques, e.g., ultrafastspectroscopy, four-wave mixing, and the Hanbury-Brown and Twiss experiment. Offering a comprehensive introduction to hot topics in current research — polariton condensates, valley coherence, and single photons, to name a few, it also discusses applications of the described physical concepts in topical areas, such as quantum information, photonics, spintronics, and optoelectronics.Covering subjects ranging from physics to materials science and optoelectronics, the book provides a lively and comprehensive introduction to semiconductor optics beyond the linear regime.With many problems, chapter introductions, schematic depictions of physical phenomena, as well as boxed inserts and a detailed index, it is suitable for use in graduate courses in physics and neighboring sciences like material science and optical communication. It is also a valuable reference resource for doctoral and advanced researchers.

The book on Semiconductor Optics has been favourably received by the s- dents and the scienti?c community worldwide. After the ?rst edition, which appeared in 1995 several reprints became necessary starting from 1997, one of them for the Chinese market. They contained only rather limited updates of the material and corrections. In the meantime scienti?c progress brought a lot of new results, which necessitate a new, seriously revised edition. This progress includes bulk se- conductors, but especially structures of reduced dimensionality. These new trends and results are partly included in existing chapters e. g. for phonons or for time-resolved spectroscopy, partly new chapters have been introduced like the ones on cavity polaritons and photonic structures. We based the description of the optical properties againon the simple and intuitively clear model ofthe Lorentz-oscillatorsandthe concept of polaritons asthequantaoflightinmatter. Butsincethereispresentlyatrendtodescribe at least the optical properties of the electronic system of semiconductors by the optical or the semiconductor Bloch equations, a chapter has been added on this topic written by Prof. Dr. R. v. Baltz (Karlsruhe) to familiarize the reader with this concept, too, which needs a bit more quantum mechanics compared the approach used here. The chapter on group theory has been revised by Prof. Dr. K. Hummer ¨ (Karlsruhe/Forchheim) Karlsruhe, C. F. Klingshirn September 2004 Preface to the First Edition One of the most prominent senses of many animals and, of course, of human beingsissightorvision.

The second edition, which appeared in 2005 and contains substantial - dates and amendments compared to the ?rst one and its corrected reprints, was again favourably received by the students and the scienti?c community worldwide. Asaconsequence,thepresentthirdeditionbecamenecessary.Thechanges introduced are, compared to the sedond edition, more limited, among others because the time elapsed between second and third edition is much shorter than the time between ?rst and second one. The main chances concern the following points: The discussion about the density, at which an electron-holeplasma is formed, has been up-dated, in the section about photonic crystals a few comments on meta-materials have been added, several new and timely references have been included and some of the misprints have been removed. Karlsruhe, C.F. Klingshirn August 2006 Preface to the Second Edition The book on Semiconductor Optics has been favourably received by the s- dents and the scienti?c community worldwide. After the ?rst edition, which appeared in 1995 several reprints became necessary starting from 1997, one of them for the Chinese market. They contained only rather limited updates of the material and corrections. In the meantime scienti?c progress brought a lot of new results, which necessitate a new, seriously revised edition. This progress includes bulk se- conductors, but especially structures of reduced dimensionality. These new trends and results are partly included in existing chapters e.g. for phonons or for time-resolved spectroscopy, partly new chapters have been introduced like the ones on cavity polaritons and photonic structures.

Volume III/34 of Landolt-Börnstein summarizes our current knowledge of semiconductor quantum structures, a topic in applied condensed matter physics with steadily growing technological importance. The present subvolume 34A covers growth and structuring of semiconductor quantum structures. It contains a general introduction, and discussions of the growth and preparation of quasi-zero-dimensional structures (quantum dots), quasi-one-dimensional structures (quantum wires) and quasi-one-dimensional structures (quantum wells). Topics include relevant growth techniques and examples for group IV semiconductors, III-V semiconductor compounds, II-VI semiconductor compounds, I-VII semiconductor compounds and IV-VI semiconductor compounds.

After the invention of semiconductor-based recti?ers and diodes in the ?rst half of the last century, the advent of the transistor paved the way for semiconductors in electronic data handling starting around the mid of the last century. The transistors widely replaced the vacuum tubes, which had even been used in the ?rst generation of computers, the Z3 developed by Konrad Zuse in the 1940s of the last century. The ?rst transistors were individually housed semiconductor devices, which had to be soldered into the electric circuits. Later on, integrated circuits were developed with increasing numbers of individual elements per square inch. The materials changed from, e. g. , PbS and Se in rf-detectors and recti?ers used frequentlyin the ?rst halfof the last centuryoverthe groupIV element semicond- tor Ge with a band gap of 0. 7eV at room temperature to Si with a value of 1. 1eV. The increase of the gap reduced the leakage current and its temperature dependence signi?cantly. Therefore, the logical step was to try GaAs with a band gap of 1. 4eV next. However, the technology of this semiconductor from the group of III-V c- poundsprovedto be muchmoredif?cult,thoughbeautifuldeviceconceptshadbeen developed.Therefore,GaAsanditsalloysandnanostructureswithotherIII-Vc- poundslike AlGaAs or InP remained restricted in electronicsto special applications like transistors for extremely high frequencies, the so-called high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future.

After the invention of semiconductor-based recti?ers and diodes in the ?rst half of the last century, the advent of the transistor paved the way for semiconductors in electronic data handling starting around the mid of the last century. The transistors widely replaced the vacuum tubes, which had even been used in the ?rst generation of computers, the Z3 developed by Konrad Zuse in the 1940s of the last century. The ?rst transistors were individually housed semiconductor devices, which had to be soldered into the electric circuits. Later on, integrated circuits were developed with increasing numbers of individual elements per square inch. The materials changed from, e. g. , PbS and Se in rf-detectors and recti?ers used frequentlyin the ?rst halfof the last centuryoverthe groupIV element semicond- tor Ge with a band gap of 0. 7eV at room temperature to Si with a value of 1. 1eV. The increase of the gap reduced the leakage current and its temperature dependence signi?cantly. Therefore, the logical step was to try GaAs with a band gap of 1. 4eV next. However, the technology of this semiconductor from the group of III-V c- poundsprovedto be muchmoredif?cult,thoughbeautifuldeviceconceptshadbeen developed.Therefore,GaAsanditsalloysandnanostructureswithotherIII-Vc- poundslike AlGaAs or InP remained restricted in electronicsto special applications like transistors for extremely high frequencies, the so-called high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future.