Gerhard Fasol - Böcker
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3 produkter
535 kr
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IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech- nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett.49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.
3 147 kr
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Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.
3 147 kr
Skickas inom 10-15 vardagar
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.