J. S. Williams – författare

The use of ion beams for materials analysis involves many different ion-atom interaction processes which previously have largely been considered in separate reviews and texts. A list of books and conference proceedings is given in Table 2. This book is divided into three parts, the first which treats all ion beam techniques and their applications in such diverse fields as materials science, thin film and semiconductor technology, surface science, geology, biology, medicine, environmental science, archaeology and so on.

Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.