Juin J. Liou – författare
1 993 kr
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Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown
2 358 kr
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2 072 kr
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1 934 kr
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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
1 206 kr
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1 429 kr
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Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry.
Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection.
Amply illustrated with tables, figures, and case studies, the text:
Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutionsElectrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
3 322 kr
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1 429 kr
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Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry.
Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection.
Amply illustrated with tables, figures, and case studies, the text:
Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutionsElectrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
1 267 kr
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The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics:
A. Green ElectronicsB. Microelectronic Circuits and SystemsC. Integrated Circuits and Packaging TechnologiesD. Computer and Communication Engineering
E. Electron Devices
F. Optoelectronic and Semiconductor Technologies
The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including:
"The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan.
"Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan.
"The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan.
"Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA.
After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan.
The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.
1 267 kr
Läs direkt efter köp
The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics:
A. Green ElectronicsB. Microelectronic Circuits and SystemsC. Integrated Circuits and Packaging TechnologiesD. Computer and Communication Engineering
E. Electron Devices
F. Optoelectronic and Semiconductor Technologies
The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including:
"The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan.
"Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan.
"The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan.
"Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA.
After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan.
The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.
1 391 kr
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1 081 kr
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1 179 kr
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910 kr
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1 629 kr
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1 934 kr
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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.