Debdeep Jena - Böcker

”Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory”. - Asher PeresSemiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels.Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.

”Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory”. - Asher PeresSemiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels.Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures.  These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures.  It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects.  In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered.  The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative.  This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications.  It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures.  These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures.  It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects.  In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered.  The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative.  This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications.  It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail.  In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included.  Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.  Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;Includes fundamental physics, as well as numerical simulations and experimental realizations.