James Mayer – författare

Ion Implantation in Semiconductors: Silicon and Germanium covers the developments in the major basic aspects in ion implantation in silicon and germanium. These aspects include dopant distribution and location, radiant damage, and electrical characteristics. This book is composed of six chapters and begins with a discussion on the factors affecting the electrical characteristics of implanted layers in silicon and germanium, such as range distributions of dopant species, lattice disorder, and location of dopant species on substitutional and interstitial sites in the lattice. The next chapters examine the basic principles of range distributions of implanted atoms and the problem of lattice disorder and radiation damage, which are vital in most implantation work. These topics are followed by an outline of the so-called channeling effect technique and its application in lattice location determination of implanted atoms. A chapter describes the dopant behavior in the layers where the majority of the implanted atoms are located, emphasizing the use of Hall-effect and sheet-resistivity measurements to determine the carrier concentration and mobility. The final chapter considers the primary characteristics of ion-implanted layers in semiconductors. This chapter also presents several rules of thumb, which allow first approximations to be made. This book is an ideal source for semiconductor specialists, researchers, and manufacturers.

Modern technology depends on materials with precisely controlled properties. Ion beams are a favoured method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition to integrated circuit technology, ion beams are used to modify the mechanical, tribological and chemical properties of metal, intermetallic and ceramic materials without altering their bulk properties. Ion-solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion-solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering and material science issues associated with metastable phase synthesis.

Modern technology depends on materials with precisely controlled properties. Ion beams are a favoured method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition to integrated circuit technology, ion beams are used to modify the mechanical, tribological and chemical properties of metal, intermetallic and ceramic materials without altering their bulk properties. Ion-solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion-solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering and material science issues associated with metastable phase synthesis.