Nabil Shovon Ashraf – författare
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4 produkter
4 produkter
New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Häftad, Engelska, 2016
303 kr
Skickas inom 10-15 vardagar
In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (
355 kr
Skickas inom 10-15 vardagar
In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures.
Parameter-Centric Scaled FET Devices
Physics Based Perspectives and Attributes
Inbunden, Engelska, 2025
429 kr
Skickas inom 10-15 vardagar
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
429 kr
Skickas inom 10-15 vardagar
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.