Nabil Shovon Ashraf – författare
Visar alla böcker från författaren Nabil Shovon Ashraf. Handla med fri frakt och snabb leverans.
7 produkter
New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Av Nabil Shovon Ashraf, Shawon Alam m. fl.
Häftad, 2016
308 kr
Lägg i varukorg
In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (
Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Häftad, 2018
366 kr
Lägg i varukorg
Low substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors …
New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Av Mohaiminul Alam, Shawon Alam m. fl.
E-bok, 2022
395 kr
Lägg i varukorg
In order to sustain Moore''s Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (
Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
E-bok, 2022
447 kr
Lägg i varukorg
Low substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors …
Parameter-Centric Scaled FET Devices
Physics Based Perspectives and Attributes
Inbunden, 2025
435 kr
Lägg i varukorg
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based …
Parameter-Centric Scaled FET Devices
Physics Based Perspectives and Attributes
E-bok, 2025
571 kr
Lägg i varukorg
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based …
Parameter-Centric Scaled FET Devices
Physics Based Perspectives and Attributes
Häftad, 2026
437 kr
Lägg i varukorg
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based …
