O. Madelung – författare

Festkörper Probleme VIII reviews the status of radiation damage in semiconducting materials and components. This book examines the problems connected to the mechanism of production of defects by bombardment with energetic particles, particularly the displacement energy. Comprised of nine chapters, this book begins with an overview of the microstructure of radiation defects in silicon, which is known from optical absorption experiments and electron spin resonance. This text then explains the preparation of single crystals of high purity or defined impurity contents, which is the basis of successful solid state research. Other chapters consider the widespread application of vapor phase reactions. This book discusses as well mechanism of latent image formation, which considers some advances in silver halide research. The final chapter explains the useful information that can be obtained by a study of the field effects. This book is a valuable resource for solid state physicists as well as applied physicists.

Festkörper Probleme IX: Advances in Solid State Physics presents a model for the behavior of electrons in non-crystalline materials. This book describes some experimental evidence that supports for the behavior of electrons. Organized into 16 chapters, this book begins with an overview of crystallization, glass forming, and melting processes in systems forming chalcogenide glasses. This text then describes the theory of the transport properties of electrons in non-crystalline solids and liquids. Other chapters consider the optical and electrical properties of amorphous semiconductors wherein the treatment is mainly restricted to the elements selenium, germanium, and tellurium. This book discusses as well the basic aspects of the optical phenomena of the Jahn–Teller effect, with emphasis on some criteria of the strength and observability of the Jahn–Teller effect. The final chapter deals with the methods for processing emulsion and metal film masks. This book is a valuable resource for solid state physicists.

Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.

Advances in Solid State Physics

Festkorper Probleme VII covers papers of the European Meeting of the IEEE about Semiconductor Device Research. The book includes papers about the advances in band structures investigations using optical techniques; some problems in the physics of power rectifiers and thyristors; the surface properties of thermally oxidized silicon; and the amplification of acoustic waves at microwave frequencies. The text also presents papers about active thin film devices, optoelectronic devices, and negative conductance in semiconductors. Electrical engineers will find the book invaluable.

Festkorperprobleme X: Advances in Solid State Physics is a compilation of papers and lectures on semiconductor physics, low temperature physics, thermodynamics, and metal physics of the German Physical Society, Freudenstadt, on April 6-11, 1970. This volume is a collection of 13 papers in English and German on the abovementioned subjects. The book describes some characteristics of the different families of narrow bandgap semiconductors; the result arising from the interaction between free carriers and acoustic waves in solids; and the advances made in the field of modulation spectroscopy. The text further discusses the relations between the state of the photoemitted electrons and the absorption process in the solid. In Chapter 8, applications to various problems in semiconductor physics are dealt with. The Empirical Pseudopotential Method and the theory of phonon dispersion curves from a pseudopotential point of view are also considered. Further examined is the Ginzburg-Landau theory of superconductivity in relation to the probability distribution of the electric field strength of laser light that has a form completely analogous to that of the pair wave function of the theory. The implications of the thermodynamics of point defects in imperfect crystals and the association of foreign ions and vacancies due to their Coulomb interaction, resulting in complexes, are investigated. This book is of interest to electrical engineers, research engineers, professors, and students in theoretical or experimental physics.

Keine ausfuhrliche Beschreibung fur "e;Munster, 22.-26. Marz 1971"e; verfugbar.

Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of seven subvolumes covers only the supplementary data to volumes III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing data, figs. and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.

Sect. 1. 247 We have already stated that the subject of ionic conductivity can be properly regarded as one part of the wider study of imperfections, and it is on account of the coherence and unity of this wider subject that ionic conductors acquire their interest [4J. Thus the ideas of mobile interstitial atoms and vacant lattice sites are relevant to a wide range of phenomena; for example diffusion in solidsl, chemical reactions between two solids and between asolid and agas (e. g. tarnish- 3 ing reactions) 2, and annealing of radiation damage . There are, of course, imper- fections such as dislocations whose properties cannot be studied to any great extent through ionic conductivity measurements. However the existence of charges on the ions and the absence of electronic conduction enables the pro- perties and concentration of the simple localised lattice defects to be studied with greater certainty and more directness than is possible in, say, metals. This is true of the original development of the theory of lattice defects by FRENKEL [2J, SCHOTTKY [3J, [5J and WAGNER [5J, and is also true at the present time. Two examples may be mentioned.Firstly the diffusion of impurity atoms in met als may sometimes involve the formation of relatively stable pairs formed from an impurity atom and a vacan- cy [6]. In NaCl (an ionic conductor), such pairs are readily formed between a 2 Na+ vacancy and a substitutionally dissolved multivalent impurity ion, e. g.

In the New Series of Landolt-Bomstein the eleven volumes III/17a···i and III/22a,b present data on the properties of semiconductors on more than 6 000 pages with tables and (about 10 000) figures. The aim of the Series "Data in Science and Technology" is to built a bridge between the libraries, where such comprehensive handbooks are situated, and the laboratory. The first volume of this series, published in 1991, contains data on the most important groups of semiconductors, the group IV elements and the III-V compounds. From the wealth of data in the tables and figures of the Landolt-Bornstein volumes III/17a and III/22a,b about 10% were condensed into this first volume. It seemed not appropriate to condense to the same extent all the other material of the remaining nine subvolumes into several further DST volumes. Instead of it all remaining data have been put into the present volume. To do this some severe restrictions became necessary. They are explained in the Introduction, and the reader is asked to read it before using this book. I would further like to focus the attention of the reader on chapter 8, where the bridge between this DST volume and the LB sources is built by cross-references between both books. I do hope that this volume meets the needs of the physical community as a quick reference to basic semiconductor data and an access to the larger data collections on this field of physics.