Advances in Multifunctional Materials and Systems II

Inbunden, Engelska, 2014

Del 245 i serien Ceramic Transactions Series

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Beskrivning

Contains a collection of papers from the below symposia held during the 10th Pacific Rim Conference on Ceramic and Glass Technology (PacRim10), June 2-7,2013, in Coronado, California 2012:• Advances in Electroceramics• Microwave Materials and Their Applications• Oxide Materials for Nonvolatile Memory Technology and Applications

Produktinformation

Utgivningsdatum:2014-08-08
Mått:163 x 241 x 15 mm
Vikt:395 g
Format:Inbunden
Språk:Engelska
Serie:Ceramic Transactions Series
Antal sidor:160
Förlag:John Wiley & Sons Inc
ISBN:9781118771273

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Innehållsförteckning

Preface viiADVANCES IN ELECTROCERAMICSPyroelectric Performances of Relaxor-Based Ferroelectric Single Crystals and their Applications in Infrared Detectors 3Long Li, Haosu Luo, Xiangyong Zhao, Xiaobing Li, Bo Ren, Qing Xu, and Wenning DiFormation of Tough Foundation Layer for Electrical Plating on Insulator using Aerosol Deposition Method of Cu-Al203 Mixed Powder 17Naoki Seto, Shingo Hirose, Hiroki Tsuda and Jun AkedoFormation and Electromagnetic Properties of 0.1 BTO/0.9NZFO Ceramic Composite with High Density Prepared by Three-Step Sintering Method 23Bin Xiao, Juncong Wang, Ning Ma, and Piyi DuMICROWAVE MATERIALS AND THEIR APPLICATIONSThin Glass Characterization in the Radio Frequency Range 37Alfred Ebberg, Jürgen Meggers, Kai Rathjen, Gerhard Fotheringham, Ivan Ndip, Florian Ohnimus, Christian Tschoban, Isa Pieper, Andreas Kilian, Sebastian Methfessel, Martin Letz, and Ulrich FotheringhamFormation of Silver Nano Particles in Percolative Ag-PbTi03 Composite Dielectric Thin Film 51Tao Hu, Zongrong Wang, Liwen Tang, Ning Ma, and Piyi DuSoftware for Calculating Permittivity of Resonators: HakCol & ErCalc 65Rick UbicEffects of MgO Additive on Structural, Dielectric Properties and Breakdown Strength of Mg2Ti04 Ceramics Doped with ZnO-B203 Glass 17Xiaohong Wang, Mengjie Wang, Zhaoqiang Li, and Wenzhong LuDesign of Microwave Dielectrics Based on Crystallography 87Hitoshi OhsatoOXIDE MATERIALS FOR NONVOLATILE MEMORY TECHNOLOGY AND APPLICATIONS Stable Resistive Switching Characteristics of Al203 Layers Inserted in Hf02 Based RRAM Devices 103Chun-Yang Huang, Jheng-Hong Jieng, and Tseung-Yuen TsengImprovement of Resistive Switching Properties of Ti/Zr02/Pt with Embedded Germanium 111Chun-An Lin, Debashis Panda, and Tseung-Yuen TsengNonvolatile Memories Using Single Electron Tunneling Effects in Si Quantum Dots Inside Tunnel Silicon Oxide 117Ryuji OhbaResistive Switching and Rectification Characteristics with CoO/Zr02 Double Layers 123Tsung-Ling Tsai, Jia-Woei Wu, and Tseng-Yuen TsengResearch Of Nano-Scaled Transition Metal Oxide Resistive Non-Volatile Memory (R-RAM) 129ChiaHua Ho, Cho-Lun Hsu, Chun-Chi Chen, Ming-Taou Lee, Hsin-Hau Huang, Kai-Shin Li, Lu-Mei Lu, Tung-Yen Lai, Wen-Cheng Chiu, Bo-Wei Wu, MeiYi Li, Min-Cheng Chen, Cheng-San Wu, Yi-Ping Hsieh, and Fu-Liang YangAuthor Index 137