Brian K. Tanner – författare

The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization

The study and application of electronic materials has created an increasing demand for sophisticated and reliable techniques for examining and characterizing these materials. This comprehensive book looks at the area of x-ray diffraction and the modern techniques available for deployment in research, development, and production. It provides the theoretical and practical background for applying these techniques in scientific and industrial materials characterization. The main aim of the book is to map the theoretical and practical background necessary to the study of single crystal materials by means of high-resolution x-ray diffraction and topography. It combines mathematical formalisms with graphical explanations and hands-on practical advice for interpreting data.

This book aims to introduce the reader to the behaviour of electrons in solids, starting with the simplest possible model, and introducing higher-level models only when the simple model is inadequate. Unlike other solid state physics texts, this book does not begin with complex crystallography, but instead builds up from the simplest possible model of a free electron in a box. The approach is to introduce the subject through its historical development, and to show how quantum mechanics is necessary for an understanding of the properties of electrons in solids. It does not treat the dynamics of the crystal lattice, but proceeds to examine the consequences of collective behaviour in the phenomena of magnetism and superconductivity. Throughout the mathematics is straightforward and uses standard notation. This text is suitable for a second or third year undergraduate course in physics, and would also be suitable for an introductory solid state course in materials science or materials chemistry.

This book aims to introduce the reader to the behaviour of electrons in solids, starting with the simplest possible model, and introducing higher-level models only when the simple model is inadequate. Unlike other solid state physics texts, this book does not begin with complex crystallography, but instead builds up from the simplest possible model of a free electron in a box. The approach is to introduce the subject through its historical development, and to show how quantum mechanics is necessary for an understanding of the properties of electrons in solids. It does not treat the dynamics of the crystal lattice, but proceeds to examine the consequences of collective behaviour in the phenomena of magnetism and superconductivity. Throughout the mathematics is straightforward and uses standard notation. This text is suitable for a second or third year undergraduate course in physics, and would also be suitable for an introductory solid state course in materials science or materials chemistry.

The study and application of electronic materials has created an increasing demand for sophisticated and reliable techniques for examining and characterizing these materials. This comprehensive book looks at the area of x-ray diffraction and the modern techniques available for deployment in research, development, and production. It provides the theoretical and practical background for applying these techniques in scientific and industrial materials characterization. The main aim of the book is to map the theoretical and practical background necessary to the study of single crystal materials by means of high-resolution x-ray diffraction and topography. It combines mathematical formalisms with graphical explanations and hands-on practical advice for interpreting data.

The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization

The scales involved in modern semiconductor manufacturing and microelectronics continue to plunge downward. Effective and accurate characterization of materials with thicknesses below a few nanometers can be achieved using x-rays. While many books are available on the theory behind x-ray metrology (XRM), X-Ray Metrology in Semiconductor Manufacturing is the first book to focus on the practical aspects of the technology and its application in device fabrication and solving new materials problems.Following a general overview of the field, the first section of the book is organized by application and outlines the techniques that are best suited to each. The next section delves into the techniques and theory behind the applications, such as specular x-ray reflectivity, diffraction imaging, and defect mapping. Finally, the third section provides technological details of each technique, answering questions commonly encountered in practice. The authors supply real examples from the semiconductor and magnetic recording industries as well as more than 150 clearly drawn figures to illustrate the discussion. They also summarize the principles and key information about each method with inset boxes found throughout the text.Written by world leaders in the field, X-Ray Metrology in Semiconductor Manufacturing provides real solutions with a focus on accuracy, repeatability, and throughput.

This volume collects the proceedings of the 23rd International Course of Crystallography, entitled "X-ray and Neutron Dynamical Diffraction, Theory and Applications," which took place in the fascinating setting of Erice in Sicily, Italy. It was run as a NATO Advanced Studies Institute with A. Authier (France) and S. Lagomarsino (Italy) as codirectors, and L. Riva di Sanseverino and P. Spadon (Italy) as local organizers, R. Colella (USA) and B. K. Tanner (UK) being the two other members of the organizing committee. It was attended by about one hundred participants from twenty four different countries. Two basic theories may be used to describe the diffraction of radiation by crystalline matter. The first one, the so-called geometrical, or kinematical theory, is approximate and is applicable to small, highly imperfect crystals. It is used for the determination of crystal structures and describes the diffraction of powders and polycrystalline materials. The other one, the so-called dynamical theory, is applicable to perfect or nearly perfect crystals. For that reason, dynamical diffraction of X-rays and neutrons constitutes the theoretical basis of a great variety of applications such as: • the techniques used for the characterization of nearly perfect high technology materials, semiconductors, piezoelectric, electrooptic, ferroelectric, magnetic crystals, • the X-ray optical devices used in all modem applications of Synchrotron Radiation (EXAFS, High Resolution X-ray Diffractometry, magnetic and nuclear resonant scattering, topography, etc. ), and • X-ray and neutron interferometry.

This volume collects the proceedings of the 23rd International Course of Crystallography, entitled "X-ray and Neutron Dynamical Diffraction, Theory and Applications," which took place in the fascinating setting of Erice in Sicily, Italy. It was run as a NATO Advanced Studies Institute with A. Authier (France) and S. Lagomarsino (Italy) as codirectors, and L. Riva di Sanseverino and P. Spadon (Italy) as local organizers, R. Colella (USA) and B. K. Tanner (UK) being the two other members of the organizing committee. It was attended by about one hundred participants from twenty four different countries. Two basic theories may be used to describe the diffraction of radiation by crystalline matter. The first one, the so-called geometrical, or kinematical theory, is approximate and is applicable to small, highly imperfect crystals. It is used for the determination of crystal structures and describes the diffraction of powders and polycrystalline materials. The other one, the so-called dynamical theory, is applicable to perfect or nearly perfect crystals. For that reason, dynamical diffraction of X-rays and neutrons constitutes the theoretical basis of a great variety of applications such as: • the techniques used for the characterization of nearly perfect high technology materials, semiconductors, piezoelectric, electrooptic, ferroelectric, magnetic crystals, • the X-ray optical devices used in all modem applications of Synchrotron Radiation (EXAFS, High Resolution X-ray Diffractometry, magnetic and nuclear resonant scattering, topography, etc. ), and • X-ray and neutron interferometry.

The scales involved in modern semiconductor manufacturing and microelectronics continue to plunge downward. Effective and accurate characterization of materials with thicknesses below a few nanometers can be achieved using x-rays. While many books are available on the theory behind x-ray metrology (XRM), X-Ray Metrology in Semiconductor Manufacturing is the first book to focus on the practical aspects of the technology and its application in device fabrication and solving new materials problems.Following a general overview of the field, the first section of the book is organized by application and outlines the techniques that are best suited to each. The next section delves into the techniques and theory behind the applications, such as specular x-ray reflectivity, diffraction imaging, and defect mapping. Finally, the third section provides technological details of each technique, answering questions commonly encountered in practice. The authors supply real examples from the semiconductor and magnetic recording industries as well as more than 150 clearly drawn figures to illustrate the discussion. They also summarize the principles and key information about each method with inset boxes found throughout the text.Written by world leaders in the field, X-Ray Metrology in Semiconductor Manufacturing provides real solutions with a focus on accuracy, repeatability, and throughput.