D. Nirmal – författare

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare fieldThis book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.

This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare fieldThis book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.

The book discusses the materials, devices, and methodologies that can be used for energy harvesting including advanced materials, devices, and systems. It describes synthesis and fabrication details of energy storage materials. It explains use of high-energy density thin films for future power systems, flexible and biodegradable energy storage devices, fuel cells and supercapacitors, nanogenerators for self-powered systems, and innovative energy harvesting methodologies.Features: Covers all relevant topics in energy harvesting research and focuses on the current state-of-the-art techniques and materials for this application. Showcases the true potential of the nature in energy harvesting industry by discussing various harvesting mechanisms based on renewable and sustainable energy sources. Explains the recent trends in flexible and wearable energy storage devices that are currently being used in IoT-based smart devices. Overviews of the state-of-the-art research performed on design and development of energy harvesting devices. Highlights the interdisciplinary research efforts needed in energy harvesting and storage devices to transform conceptual ideas to working prototypes.This book is aimed at graduate students and researchers in emerging materials, energy engineering, including harvesting and storage.

The book discusses the materials, devices, and methodologies that can be used for energy harvesting including advanced materials, devices, and systems. It describes synthesis and fabrication details of energy storage materials. It explains use of high-energy density thin films for future power systems, flexible and biodegradable energy storage devices, fuel cells and supercapacitors, nanogenerators for self-powered systems, and innovative energy harvesting methodologies.Features: Covers all relevant topics in energy harvesting research and focuses on the current state-of-the-art techniques and materials for this application. Showcases the true potential of the nature in energy harvesting industry by discussing various harvesting mechanisms based on renewable and sustainable energy sources. Explains the recent trends in flexible and wearable energy storage devices that are currently being used in IoT-based smart devices. Overviews of the state-of-the-art research performed on design and development of energy harvesting devices. Highlights the interdisciplinary research efforts needed in energy harvesting and storage devices to transform conceptual ideas to working prototypes.This book is aimed at graduate students and researchers in emerging materials, energy engineering, including harvesting and storage.

This book covers 2D materials, transistors, and low-power transistor technologies. Additionally, it discusses wide range of semiconductor devices such as transistors, LEDs, energy harvesting devices, and spintronics devices.Covers nanoscale semiconductor materials, low-power transistors, and applications in integrated circuits.Offers comprehensive coverage of design, simulation, and experimentation for a range of field-effect transistors.Highlights the importance of using piezoelectric nanogenerators for energy applications.Showcases the developments in nanoscale device simulation and opportunities in electronic fabrication.Explains the latest nanoscale sensors, micro to nanoscale energy harvesting devices, and nano energy storage devices.The book is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics, and communications engineering.

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.