Edward V. Barnat – författare
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2 produkter
2 produkter
1 066 kr
Skickas inom 10-15 vardagar
Pulsed and pulsed bias sputter deposition are advanced thin deposition techniques that allow one to produce high quality metal and insulating films. In the pulsed sputtering case, the technique allows one to deposit insulating films while minimizing adverse effects associated with charge accumulation on the target in the reactive deposition mode. In the pulsed bias sputtering case, one can deposit metal films on an insulating substrate while controlling the degree of charging on the substrate. One of the important aspects of these techniques is to be able to control the film properties such as density, orientation, texture, and morphology during deposition. This book provides basic knowledge on the design of the instrumentation for pulsed and pulsed bias sputtering techniques as well as the knowledge for the control of thin film properties using the deposition parameters such as pulsing cycle and duty. This book focuses on the basic principles and experimentation of the field.
1 066 kr
Skickas inom 10-15 vardagar
Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.