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17 produkter

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17 produkter

Evolution of Thin Film Morphology
Modeling and Simulations
AvMatthew Pelliccione,Toh-Ming Lu
Inbunden, Engelska, 2007
1 623 kr
Skickas inom 10-15 vardagar
Thin?lmdepositionisthemostubiquitousandcriticaloftheprocessesusedto manufacture high-tech devices such as microprocessors, memories, solar cells, microelectromechanicalsystems(MEMS),lasers,solid-statelighting,andp- tovoltaics. The morphology and microstructure of thin ?lms directly controls their optical, magnetic, and electrical properties, which are often signi?cantly di?erent from bulk material properties. Precise control of morphology and microstructure during thin ?lm growth is paramount to producing the - sired ?lm quality for speci?c applications. To date, many thin ?lm deposition techniques have been employed for manufacturing ?lms, including thermal evaporation,sputterdeposition,chemicalvapordeposition,laserablation,and electrochemical deposition. The growth of ?lms using these techniques often occurs under highly n- equilibrium conditions (sometimes referred to as far-from-equilibrium), which leads to a rough surface morphology and a complex temporal evolution. As atoms are deposited on a surface, atoms do not arrive at the surface at the same time uniformly across the surface. This random ?uctuation, or noise, which is inherent to the deposition process, may create surface growth front roughness. The noise competes with surface smoothing processes, such as surface di?usion, to form a rough morphology if the experiment is performed at a su?ciently low temperature and / or at a high growth rate. In addition, growth front roughness can also be enhanced by growth processes such as geometrical shadowing. Due to the nature of the deposition process, atoms approaching the surface do not always approach in parallel; very often atoms arrive at the surface with an angular distribution.
Evolution of Thin Film Morphology
Modeling and Simulations
AvToh-Ming Lu,Matthew Pelliccione
E-bok
PDF, Engelska, 2008
2 044 kr
Läs direkt efter köp
Thin?lmdepositionisthemostubiquitousandcriticaloftheprocessesusedto manufacture high-tech devices such as microprocessors, memories, solar cells, microelectromechanicalsystems(MEMS),lasers,solid-statelighting,andp- tovoltaics. The morphology and microstructure of thin ?lms directly controls their optical, magnetic, and electrical properties, which are often signi?cantly di?erent from bulk material properties. Precise control of morphology and microstructure during thin ?lm growth is paramount to producing the - sired ?lm quality for speci?c applications. To date, many thin ?lm deposition techniques have been employed for manufacturing ?lms, including thermal evaporation,sputterdeposition,chemicalvapordeposition,laserablation,and electrochemical deposition. The growth of ?lms using these techniques often occurs under highly n- equilibrium conditions (sometimes referred to as far-from-equilibrium), which leads to a rough surface morphology and a complex temporal evolution. As atoms are deposited on a surface, atoms do not arrive at the surface at the same time uniformly across the surface. This random ?uctuation, or noise, which is inherent to the deposition process, may create surface growth front roughness. The noise competes with surface smoothing processes, such as surface di?usion, to form a rough morphology if the experiment is performed at a su?ciently low temperature and / or at a high growth rate. In addition, growth front roughness can also be enhanced by growth processes such as geometrical shadowing. Due to the nature of the deposition process, atoms approaching the surface do not always approach in parallel; very often atoms arrive at the surface with an angular distribution.
Pulsed and Pulsed Bias Sputtering
Principles and Applications
AvEdward V. Barnat,Toh-Ming Lu
Inbunden, Engelska, 2003
1 084 kr
Skickas inom 10-15 vardagar
Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.
Chemical Vapor Deposition Polymerization
The Growth and Properties of Parylene Thin Films
AvJeffrey B. Fortin,Toh-Ming Lu
Inbunden, Engelska, 2003
1 084 kr
Skickas inom 10-15 vardagar
Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.
Del 108 - Springer Series in Materials Science
Evolution of Thin Film Morphology
Modeling and Simulations
AvMatthew Pelliccione,Toh-Ming Lu
Häftad, Engelska, 2010
1 623 kr
Skickas inom 10-15 vardagar
Thin?lmdepositionisthemostubiquitousandcriticaloftheprocessesusedto manufacture high-tech devices such as microprocessors, memories, solar cells, microelectromechanicalsystems(MEMS),lasers,solid-statelighting,andp- tovoltaics. The morphology and microstructure of thin ?lms directly controls their optical, magnetic, and electrical properties, which are often signi?cantly di?erent from bulk material properties. Precise control of morphology and microstructure during thin ?lm growth is paramount to producing the - sired ?lm quality for speci?c applications. To date, many thin ?lm deposition techniques have been employed for manufacturing ?lms, including thermal evaporation,sputterdeposition,chemicalvapordeposition,laserablation,and electrochemical deposition. The growth of ?lms using these techniques often occurs under highly n- equilibrium conditions (sometimes referred to as far-from-equilibrium), which leads to a rough surface morphology and a complex temporal evolution. As atoms are deposited on a surface, atoms do not arrive at the surface at the same time uniformly across the surface. This random ?uctuation, or noise, which is inherent to the deposition process, may create surface growth front roughness. The noise competes with surface smoothing processes, such as surface di?usion, to form a rough morphology if the experiment is performed at a su?ciently low temperature and / or at a high growth rate. In addition, growth front roughness can also be enhanced by growth processes such as geometrical shadowing. Due to the nature of the deposition process, atoms approaching the surface do not always approach in parallel; very often atoms arrive at the surface with an angular distribution.
Chemical Vapor Deposition Polymerization
The Growth and Properties of Parylene Thin Films
AvJeffrey B. Fortin,Toh-Ming Lu
Häftad, Engelska, 2010
1 084 kr
Skickas inom 10-15 vardagar
Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.
Pulsed and Pulsed Bias Sputtering
Principles and Applications
AvEdward V. Barnat,Toh-Ming Lu
Häftad, Engelska, 2014
1 084 kr
Skickas inom 10-15 vardagar
Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.
Del 157 - Springer Series in Materials Science
Metal-Dielectric Interfaces in Gigascale Electronics
Thermal and Electrical Stability
AvMing He,Toh-Ming Lu
Inbunden, Engelska, 2011
1 084 kr
Skickas inom 10-15 vardagar
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
Metal-Dielectric Interfaces in Gigascale Electronics
Thermal and Electrical Stability
AvToh-Ming Lu,Ming He
E-bok
PDF, Engelska, 2012
1 416 kr
Läs direkt efter köp
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them.
Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
RHEED Transmission Mode and Pole Figures
Thin Film and Nanostructure Texture Analysis
AvGwo-Ching Wang,Toh-Ming Lu
Inbunden, Engelska, 2013
1 084 kr
Skickas inom 10-15 vardagar
This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators. This book also:Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figuresRHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.
RHEED Transmission Mode and Pole Figures
Thin Film and Nanostructure Texture Analysis
AvToh-Ming Lu,Gwo-Ching Wang
E-bok
PDF, Engelska, 2013
1 413 kr
Läs direkt efter köp
This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators.
This book also:
Presents a new application of RHEED in the transmission mode
Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures
Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figures
RHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.
Pulsed and Pulsed Bias Sputtering
Principles and Applications
AvToh-Ming Lu,Edward V. Barnat
E-bok
PDF, Engelska, 2013
1 413 kr
Läs direkt efter köp
Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.
Chemical Vapor Deposition Polymerization
The Growth and Properties of Parylene Thin Films
AvToh-Ming Lu,Jeffrey B. Fortin
E-bok
PDF, Engelska, 2013
1 413 kr
Läs direkt efter köp
Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system''s pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.
Del 157 - Springer Series in Materials Science
Metal-Dielectric Interfaces in Gigascale Electronics
Thermal and Electrical Stability
AvMing He,Toh-Ming Lu
Häftad, Engelska, 2016
1 084 kr
Skickas inom 10-15 vardagar
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
RHEED Transmission Mode and Pole Figures
Thin Film and Nanostructure Texture Analysis
AvGwo-Ching Wang,Toh-Ming Lu
Häftad, Engelska, 2016
1 084 kr
Skickas inom 10-15 vardagar
This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators. This book also:Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figuresRHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.
Dielectric Breakdown in Gigascale Electronics
Time Dependent Failure Mechanisms
AvJuan Pablo Borja,Toh-Ming Lum. fl.
Häftad, Engelska, 2016
546 kr
Skickas inom 10-15 vardagar
This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
Dielectric Breakdown in Gigascale Electronics
Time Dependent Failure Mechanisms
AvJoel Plawsky,Toh-Ming Lum. fl.
E-bok
PDF, Engelska, 2016
710 kr
Läs direkt efter köp
This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

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Toh-Ming Lu – författare

Evolution of Thin Film Morphology

Evolution of Thin Film Morphology

Pulsed and Pulsed Bias Sputtering

Chemical Vapor Deposition Polymerization

Evolution of Thin Film Morphology

Chemical Vapor Deposition Polymerization

Pulsed and Pulsed Bias Sputtering

Metal-Dielectric Interfaces in Gigascale Electronics

Metal-Dielectric Interfaces in Gigascale Electronics

RHEED Transmission Mode and Pole Figures

RHEED Transmission Mode and Pole Figures

Pulsed and Pulsed Bias Sputtering

Chemical Vapor Deposition Polymerization

Metal-Dielectric Interfaces in Gigascale Electronics

RHEED Transmission Mode and Pole Figures

Dielectric Breakdown in Gigascale Electronics

Dielectric Breakdown in Gigascale Electronics

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