Geert Hellings - Böcker

Just in time to satisfy the kids of all ages who received Rubik's Cubes as holiday gifts, here is the book to ensure that the gift won?t go unused (or unsolved). Puzzle Masters Jerry Slocum, David Singmaster, Dieter Gebhardt, Wei-Hwa Huang, and Geert Hellings, share their expertise on the greatest puzzle ever created. Not only does The Cube provide dozens of strategies for competitive cubing?including speedcubing?it also shows you how to solve every kind of cube that exists: the 'Mini Cube' 2x2x2; the 'Classic' 3x3x3; the 'Rubik's Revenge' 4x4x4; the 'Professor's Cube' 5x5x5; and the largest cubes available, the 'V-Cube 6' 6x6x6 and the 'V-Cube 7' 7x7x7. The book even includes modular instructions for cubes of any potential size! All solutions are fully illustrated with all-new, easy-to-follow instructions created specially for this book. This unique book also includes a fascinating history of the Rubik's Cube?from its invention in 1974 by Ern? Rubik to the '80s craze to its resurgence today, including dozens of rare photographs of vintage cubes, ephemera, and more! Packed with color photos from Jerry Slocum's extensive and unique collection of mechanical puzzles, The Cube is a must-have companion to the ultimate brainteaser.

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.