Jacques Derrien - Böcker
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2 produkter
2 produkter
Porous Silicon Science and Technology
Winter School Les Houches, 8 to 12 February 1994
Häftad, Engelska, 1995
538 kr
Skickas inom 10-15 vardagar
The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.
Semiconductor Interfaces: Formation and Properties
Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987
Häftad, Engelska, 2011
1 069 kr
Skickas inom 10-15 vardagar
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.