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This volume constitutes the Proceedings of the November 8-10, 1982 Conference on EMERGENT PROCESS METHODS FOR HIGH TECHNOLOGY CERAMICS, held at North Carolina State University in Raleigh. It was the nineteenth in a series of "University Conferences on Ceramic Sci ence" initiated in 1964 by four institutions of which North Carolina State University is a charter member, along with the University of California at Berkeley, Notre Dame University, and the New York State College of Ceramics at Alfred University. More recently, ceramic oriented faculty in departments at the Pennsylvania State University and Case-Western Reserve University have joined the four initial institutions as permanent members of the consortium. These research oriented conferences, each uniquely concerned with a timely ceramic theme, have been well attended by audiences which typically were both international and interdisciplinary in character; their published Proceedings have been well received and are frequently cited. This three day conference addressed the fundamental scientific background as well as the technological state-of-the-art of several novel methods which are beginning to influence present and future directions for non-traditional ceramic processing, thus affecting many of the advanced ceramic materials needed for a wide variety of research and industrial applications. The number, the importance and the application of new ceramic processing techniques have expanded considerably during the last ten years.
Del 33 - Selected Topics in Electronics and Systems
Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance
Inbunden, Engelska, 2004
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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.