Shriram Ramanathan - Böcker
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5 produkter
5 produkter
502 kr
Skickas inom 7-10 vardagar
Artificial intelligence is transforming industries and society, but its high energy demands challenge global sustainability goals. Biological intelligence, in contrast, offers both good performance and exceptional energy efficiency. Neuromorphic computing, a growing field inspired by the structure and function of the brain, aims to create energy-efficient algorithms and hardware by integrating insights from biology, physics, computer science, and electrical engineering. This concise and accessible book delves into the principles, mechanisms, and properties of neuromorphic systems. It opens with a primer on biological intelligence, describing learning mechanisms in both simple and complex organisms, then turns to the application of these principles and mechanisms in the development of artificial synapses and neurons, circuits, and architectures. The text also delves into neuromorphic algorithm design, and the unique challenges faced by algorithmic researchers working in this area. The book concludes with a selection of practice problems, with solutions available to instructors online.
350 kr
Skickas inom 7-10 vardagar
This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.
Thin Film Metal-Oxides
Fundamentals and Applications in Electronics and Energy
Inbunden, Engelska, 2009
1 590 kr
Skickas inom 10-15 vardagar
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers.Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
1 590 kr
Skickas inom 10-15 vardagar
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers.Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling: Volume 1252
Inbunden, Engelska, 2010
1 245 kr
Skickas inom 7-10 vardagar
This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.