Advances in Solid State Technology – serie
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5 produkter
5 produkter
Inbunden, Engelska, 1989
3 256 kr
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Del 5 - Advances in Solid State Technology
Gaseous Electronics and its Applications
Inbunden, Engelska, 1991
2 173 kr
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Inbunden, Engelska, 1985
3 256 kr
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Del 3 - Advances in Solid State Technology
Defects and Properties of Semiconductors
Defect Engineering
Häftad, Engelska, 2011
765 kr
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This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Del 1 - Advances in Solid State Technology
Silicon-on-Insulator
Its Technology and Applications
Häftad, Engelska, 2011
548 kr
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This volume contains papers presented during the US-Japan seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oiso, Japan, June 20-24, 1983. This seminar was co-sponsored by the National Science Foun dation and Japan Society for the Promotion of Science and co-chaired by Professor S. Furukawa, Tokyo Insitute of Technology, and Professor J. W. Mayer, Cornell University. Extensive topics such as solid phase epitaxy, growth mechanisms and interface kinetics, silicon-on-insulator structures, silicide-on-Si sturctures, novel nanometer and layered devices, and so on were discussed and more than 50 papers were presented. Most papers were original ones with brief reviews added for the convenience of the readers at the editor's request. The editor classified these papers into two groups and compiled two volumes; "Silicon-on-Insulator (SOl): Its Technology and Applications" and "Layered Structures and Interface Kinetics: Their Technology and Ap plications". This volume mainly contains the papers related to epitaxial growth of metal, insulator and semiconductor films, growth mechanisms, interface kinetics, properties and applications of silicide films, and novel nanometer and layered devices. These papers offer basic properties of the layered structures and possibility of various applications of the structures to present and future semiconductor devices. The editor is indebted to our fellow contributors who agreed to par take in publishing the proceedings of the seminar, to Japanese principal par ticipants of the seminar for encouraging him to have the seminar and to compile these volumes, to Professor H. Ishiwara for his secretarial work throughout the seminar and the publication.