Electrical Characterization of Silicon-on-Insulator Materials and Devices

AvSorin Cristoloveanu,Sheng Li

Inbunden, Engelska, 1995

Del i serien Springer International Series in Engineering and Computer Science

2 200 kr

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2 202 kr

Beskrivning

This text describes a variety of electrical characterization methods, from wafer screening and defect identification to device evaluation. Each technique comes with technical information - experimental set-up, basic models, parameter extraction - that should be useful to the reader. The book offers a treatment of all aspects of the latest SOI technologies, including material synthesis, device physics, characterization, circuit applications and reliability issues. Both the academic researchers and engineers working on the SOI technology should find this book useful as a source of scientific information, practical details and references. For people planning to enter the SOI field, this book offers a coverage of the SOI technology and a presentation of the underlying concepts.

Produktinformation

Utgivningsdatum:1995-06-30
Mått:155 x 235 x 26 mm
Vikt:764 g
Format:Inbunden
Språk:Engelska
Serie:Springer International Series in Engineering and Computer Science
Antal sidor:381
Upplaga:1995
Förlag:Kluwer Academic Publishers
ISBN:9780792395485

Utforska kategorier

Innehållsförteckning

Preface.- 1 Introduction.- 1.1 Why SOI ?.- 1.2 Why Not Yet SOI ?.- 1.3 Why an SOI Book?.- 2 Methods of Forming SOI Wafers.- 2.1 SIMOX.- 2.2 Wafer Bonding.- 2.3 Zone-Melting Recrystallization.- 2.4 Epitaxial Lateral Overgrowth.- 2.5 Full Isolation by Porous Oxidized Silicon.- 2.6 Silicon on Sapphire.- 2.7 Silicon on Zirconia.- 3 SOI Devices.- 3.1 Advanced CMOS and Bipolar Devices.- 3.2 Radiation-Hardened Circuits.- 3.3 High-Voltage Devices.- 3.4 High-Temperature Devices.- 3.5 Low-Power Applications.- 3.6 Three-Dimensional Devices.- 3.7 Transducers.- 3.8 Innovative Devices.- 4 Wafer-Screening Techniques.- 4.1 The Basis for Wafer Screening.- 4.2 Surface Photovoltage.- 4.3 Dual-Beam S-Polarized Reflectance.- 4.4 Dual-Beam Optical Modulation.- 4.5 Other Optical Methods.- 4.6 Point Contact Pseudo-MOS Transistor.- 4.7 Quick-Turnaround Capacitance.- 4.8 Pinhole Detection.- 4.9 Conclusion.- 5 Transport Measurements.- 5.1 Four-Point Probe.- 5.2 Spreading Resistance.- 5.3 Hall Effect and Magnetoresistance.- 5.4 Van der Pauw Measurements.- 5.5 Photoconductivity.- 5.6 PICTS.- 6 SIS Capacitor-Based Characterization Techniques.- 6.1 Capacitance and Conductance Techniques.- 6.2 Bias-Scan DLTS Technique.- 6.4 Zerbst Method and Generation Lifetime.- 6.5 MOS Capacitance Method.- 7 Diode Measurements.- 7.1 Current—Voltage Measurements in a P—N Diode.- 7.2 Differential Current/Capacitance Method.- 7.3 Gated-Diode Measurements.- 7.4 Deep-Level Transient Spectroscopy.- 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics.- 9 Transistor-Based Characterization Techniques.- List of Symbols.

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AvSorin Cristoloveanu,Sheng Li

Inbunden, Engelska, 1995

Del i serien Springer International Series in Engineering and Computer Science

2 200 kr

Beställningsvara. Skickas inom 10-15 vardagar. Fri frakt över 249 kr.

Fler format och utgåvor

Häftad

2 202 kr

Beskrivning

Produktinformation

Utgivningsdatum:1995-06-30
Mått:155 x 235 x 26 mm
Vikt:764 g
Format:Inbunden
Språk:Engelska
Serie:Springer International Series in Engineering and Computer Science
Antal sidor:381
Upplaga:1995
Förlag:Kluwer Academic Publishers
ISBN:9780792395485

Utforska kategorier

Innehållsförteckning

Preface.- 1 Introduction.- 1.1 Why SOI ?.- 1.2 Why Not Yet SOI ?.- 1.3 Why an SOI Book?.- 2 Methods of Forming SOI Wafers.- 2.1 SIMOX.- 2.2 Wafer Bonding.- 2.3 Zone-Melting Recrystallization.- 2.4 Epitaxial Lateral Overgrowth.- 2.5 Full Isolation by Porous Oxidized Silicon.- 2.6 Silicon on Sapphire.- 2.7 Silicon on Zirconia.- 3 SOI Devices.- 3.1 Advanced CMOS and Bipolar Devices.- 3.2 Radiation-Hardened Circuits.- 3.3 High-Voltage Devices.- 3.4 High-Temperature Devices.- 3.5 Low-Power Applications.- 3.6 Three-Dimensional Devices.- 3.7 Transducers.- 3.8 Innovative Devices.- 4 Wafer-Screening Techniques.- 4.1 The Basis for Wafer Screening.- 4.2 Surface Photovoltage.- 4.3 Dual-Beam S-Polarized Reflectance.- 4.4 Dual-Beam Optical Modulation.- 4.5 Other Optical Methods.- 4.6 Point Contact Pseudo-MOS Transistor.- 4.7 Quick-Turnaround Capacitance.- 4.8 Pinhole Detection.- 4.9 Conclusion.- 5 Transport Measurements.- 5.1 Four-Point Probe.- 5.2 Spreading Resistance.- 5.3 Hall Effect and Magnetoresistance.- 5.4 Van der Pauw Measurements.- 5.5 Photoconductivity.- 5.6 PICTS.- 6 SIS Capacitor-Based Characterization Techniques.- 6.1 Capacitance and Conductance Techniques.- 6.2 Bias-Scan DLTS Technique.- 6.4 Zerbst Method and Generation Lifetime.- 6.5 MOS Capacitance Method.- 7 Diode Measurements.- 7.1 Current—Voltage Measurements in a P—N Diode.- 7.2 Differential Current/Capacitance Method.- 7.3 Gated-Diode Measurements.- 7.4 Deep-Level Transient Spectroscopy.- 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics.- 9 Transistor-Based Characterization Techniques.- List of Symbols.