Fully Depleted Silicon-On-Insulator

Sorin Cristoloveanu received the PhD (1976) in Electronics and the French Doctorat ès-Sciences in Physics (1981) from Grenoble Polytechnic Institute, France. He is currently Director of Research CNRS. He also worked at JPL (Pasadena), Motorola (Phoenix), and the Universities of Maryland, Florida, Vanderbilt, Western Australia, and Kyungpook (World Class University project). He served as the director of the LPCS Laboratory and the Center for Advanced Projects in Microelectronics, initial seed of Minatec center. He authored more than 1,100 technical journal papers and communications at international conferences (including 170 invited contributions). He is the author or the editor of 36 books, and he has organized 35 international conferences. His expertise is in the area of the electrical characterization and modeling of semiconductor materials and devices, with special interest for silicon-on-insulator structures. He has supervised more than 100 PhD completions. He is the recipient of the IEEE Andy Grove award 2017. With his students, he has received 17 Best Paper Awards, an Academy of Science Award (1995), and the Electronics Division Award of the Electrochemical Society (2002). He is a Fellow of IEEE, a Fellow of the Electrochemical Society, a Distinguished Lecturer of the Electron Device Society, and Editor of Solid-State Electronics.

Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." – Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." – Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." – Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." – Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." – Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book."

• Part I Technology1. FD-SOI technologyPart II Mechanisms in FD-SOI MOSFET2. Coupling effects3. Scaling effects4. Floating-body effectsPart III Electrical characterization techniques for FD-SOI structures5. The pseudo-MOSFET6. Diode-based characterization methods7. Characterization methods for FD-SOI MOSFETPart IV Innovative FD-SOI devices8. Electrostatic doping and related devices9. Band-modulation devices10. Emerging devicesAnnex: FD-SOI teasers