Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2011 (Wofe-11)

AvCRISTOLOVEANU SORIN,Sorin Cristoloveanu

Inbunden, Engelska, 2013

Del 53 i serien Selected Topics in Electronics and Systems

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Beskrivning

Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics.

Produktinformation

Utgivningsdatum:2013-08-30
Mått:152 x 229 x 23 mm
Vikt:576 g
Format:Inbunden
Språk:Engelska
Serie:Selected Topics in Electronics and Systems
Antal sidor:272
Förlag:World Scientific Publishing Co Pte Ltd
ISBN:9789814536844

Utforska kategorier

Elektronik och kommunikationer inom Naturvetenskap och teknik

Innehållsförteckning

Levy Flight of Holes in InP Semiconductor Scintillator (S Luryi and A Subashiev); InAs1-xSbx Alloys with Native Lattice Parameters Grown on Compositionally Graded Buffers: Structural and Optical Properties (D Wang, D Donetsky, Y Lin, G Kipshidze, L Shterengas, G Belenky, W L Sarney and S P Svensson); High-Performance Interband Cascade Lasers for λ = 3-4.5 μm (M W W Bewley, C S Kim, M Kim, I Vurgaftman, C L Canedy, J R Lindle, J Abell and J R Meyer); GaN Based 3D Core-Shell LEDs (X Wang, S Li, S Fundling, J Wei, M Erenburg, J Ledig, H H Wehmann, A Waag, W Bergbauer, M Mandl, M Strassburg and U Steegmuller); Progress in SiC Materials/Devices and Their Competition (D K Schroder); Performance and Applications of Deep UV LED (M Shatalov, A Lunev, X Hu, O Bilenko, I Gaska, W Sun, J Yang, A Dobrinsky, Y Bilenko, R Gaska and M Shur); Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission (S Albert, A Bengoechea-Encabo, M A Sanchez-Garcia, F Barbagini, E Calleja, E Luna, A Trampert, U Jahn, P Lefebvre, L L Lopez, S Estrade, J M Rebled, F Peiro, G Nataf, P de Mierry and J Zuniga-Perez); Catalyst-Free GaN Nanowires as Nanoscale Light Emitters (K Bertness, N Sanford, J Schlager, A Roshko, T Harvey, P Blanchard, M Brubaker, A Herrero and A Sanders); Recessed-Gate Normally-Off GaN MOSFET Technologies (K-S Im, K-W Kim, D-S Kim, H-S Kang, D-K Kim, S-J Chang, Y-H Bae, S-H Hahm, S Cristoloveanu and J-H Lee); Silicon-on-Insulator MESFETs at the 45nm Node (W Lepkowski, S J Wilk, M R Ghajar, A Parsi and T J Thornton); Advanced Concepts for Floating-Body Memories (F Gamiz, N Rodriguez and S Cristoloveanu); Plasmonic-Based Devices for Optical Communications (D K Mynbaev and V Sukharenko); Spintronic Devices and Circuits for Low-Voltage Logic (D H Morris, D M Bromberg, J-G (Jimmy) Zhu and L Pileggi); Biomolecular Field Effect Sensors (bioFETs): From Qualitative Sensing to Multiplexing, Calibration and Quantitative Detection from Whole Blood (A Vacic and M A Reed); Theoretical Investigation of Intraband, Infrared Absorbance in Inorganic/Organic Nanocomposite Thin Films with Varying Colloidal Quantum Dot Surface Ligand Materials (K R Lantz and A D Stiff-Roberts).

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