Selected Topics in Electronics and Systems – serie

Foreword by Charles H TownesThis volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers.As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport.

Surface acoustic wave (SAW) devices are recognized for their versatility and efficiency in controlling and processing electrical signals. This has resulted in a multitude of device concepts for a wide range of signal processing functions, such as delay lines, filters, resonators, pulse compressors, convolvers, and many more. As SAW technology has found its way into mass market products such as TV receivers, pagers, keyless entry systems and cellular phones, the production volume has risen to millions of devices produced every day. At the other end of the scale, there are specialized high performance signal processing SAW devices for satellite communication and military applications, such as radar and electronic warfare.This volume, together with Volume 2, presents an overview of recent advances in SAW technology, systems and applications by some of the foremost researchers in this exciting field.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

In this volume, we have put together papers spanning a broad range — from the area of modeling of strain and misfit dislocation densities, microwave absorption characteristics of nanocomposites, to X-ray diffraction studies.Specific topics in this volume include:In summary, papers selected in this volume cover various aspects of high performance logic and circuits for high-speed electronic systems.

"This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology."IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

This volume on Nanotechnology in Electronics, Photonics, Biosensors, and Emerging Technologies comprises research papers spanning from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields. These include blockchain improving security; ultra-sensitive Point of Care biosensor for detecting pathogeneses and detection of RNA-Virus infections; and advanced materials and devices such as ROM for anti-reverse engineering, FPGA bit-stream encryption, switching transients in memristors, and high-speed multi-bit logic and memories. Applications such as 3D-4D inkjet-printed wireless ultra-broadband modules for IOT, smarttag, and smart city applications are also included. In the area of material synthesis, carbon nanotube synthesis, III-nitride film growth via plasma-enhanced atomic layer deposition are noted. Threading dislocation behavior in InGaAs/GaAs (001) superlattice buffer layers brings a novel approach.Papers presented in this volume cover various aspects of high performance materials and devices for implementing high-speed electronic systems. This volume will serve as a useful reference for recent developments in nanotechnology.

This unique edited compendium consists of peer-reviewed articles focusing on 2D materials-based nanoelectronics to nanophotonic devices for biosensors and bio-nano-systems.Wide-ranging topics span from novel systems for implementing data with security tokens, single chemical sensor for multi-analyte mixture detection, additively manufactured RF devices for communication, packaging, remote sensing, to energy harvesting applications.Quantum dot-based devices featuring optical modulators and mid-infrared photodetectors in the form of Ferroelectric and quantum dot non-volatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications are also included.Contributed by eminent researchers, recent coverage of materials science for high-speed electronics, nanoelectronics based on ferroelectric and van der Waals materials, material synthesis, modeling of dislocations behavior in various heterostructures, Ultrahigh-Q on-chip SiGe microresonators for quantum transduction in new trend in computing are also prominently discussed.

This unique compendium consists of peer-reviewed articles spanning from novel growth of materials for nanoelectronic and nanophotonic devices, electronic nose sensor array, bio-nano-systems, artificial intelligence/machine learning, and emerging technologies, to applications in each of these fields.Systems implementing additively manufactured RF devices for communication, packaging, remote sensing, compact multi-bit FETs and memories are also included.Plasmonic nanostructures with electrical connections have potential applications as new electro-optic devices. Quantum dot-based devices are discussed with regard to optical logic gates, mid-infrared photodetectors, gain and index tailored external cavity high power lasers.Contributed by eminent researchers, this useful reference text broadly illustrates relevant aspects of high-performance materials and emerging nanodevices for implementing high-speed electronic systems.

The unique compendium provides a broad up-to-date perspective on THz science and technology — enabling technology for 6G communication, detection of biological and chemical hazardous agents, cancer detection, monitoring of industrial processes and products, and detection of mines and explosives.Contributed by eminent researchers, this useful reference text links THz science and THz applications and combines a detailed review of the state-of-art with the most recent breakthrough research results.

This timely compendium provides state-of-the-art articles covering research areas in Nanoelectronics, Nanophotonics, Quantum and Emerging Technologies.Contributed by eminent researchers from both the academia and industry, this useful reference text details research outputs and findings in Microelectronics and Optoelectronics for High-Speed Electronics.

This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

This book explores the unique advantages and large inherent transmission capacity of optical fiber communication systems. The long-term and high-risk research challenges of optical transceivers are analyzed with a view to sustaining the seemingly insatiable demand for bandwidth. A broad coverage of topics relating to the design of high-speed optical devices and integrated circuits, oriented to low power, low cost, and small area, is discussed.Written by specialists with many years of research and engineering experience in the field of optical fiber communication, this book is essential for an audience dedicated to the development of integrated electronic systems for optical communication applications. It can also be used as a supplementary text for graduate courses on optical transceiver IC design.

This book provides the reader with a unique opportunity to understand the basic and applied research and technology areas that support applications to enable Transformational capabilities for US Soldiers. The research papers are in line with the theme of the 24th Army Science Conference: “Transformational Science and Technology for the Current and Future Force,” emphasizing the critical role of Science and Technology in addressing the significant challenges posed by Global War On Terrorism while simultaneously developing Transformational capabilities for the Future Force.

The field of nanotubes and nanowires is evolving at a rapid pace, with many potential applications in electronics, optics, and sensors, to name a few. In this book, various prominent researchers summarize our current understanding of these new materials systems, as well as some of these potential applications. A snapshot of the state-of-the-art in the field of nanowires and nanotubes, the contributions give an instructive mix of experimental, theoretical, and visionary material to give the reader an indication of where the field is now, and where it is going.With several points of view represented, including academic theoreticians, academic experimental device engineers, and industry researchers from well-known semiconductor companies, Nanotubes and Nanowires is an essential source of reference for physicists, chemists, materials scientists, and graduate students interested in keeping abreast of the latest developments in nanotechnology.

This book provides unique perspectives on the state of the art in multispectral/hyperspectral techniques for early-warning monitoring against chemical, biological and radiological (CB&R) contamination of both surface (e.g. land) and air (e.g. atmospheric) environments through the presentation of a comprehensive survey of the novel spectroscopic methodologies and technologies that are emerging to address the CB&R defense and security challenges of the future. The technical content in this book lends itself to the non-traditional requirements for point and stand-off detection that have evolved out of the US joint services programs over many years. In particular, the scientific and technological work presented seeks to enable hyperspectral-based sensing and monitoring that is in real time and in-line; low in cost and labor requirements; and easy to support, maintain and use in military and security-relevant scenarios.

Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different "species" in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation. Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

Frontiers in Electronics contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly reinforced the tradition of scientific quality and visionary research. The issues addressed ranged from THz and infrared electronics to nanoelectronics and photonics. The papers focused on the fabrication, characterization and applications of nanodevices; wide band gap structures; and state-of-the-art FETs. The participants also discussed the device physics and processing issues including aspects related to SOI and germanium-on-insulator technologies, TFTs, and advanced CMOS and MOSFETs. It is this cross-pollination between different but related fields that made this conference very special.This book, which goes beyond the publication of the WOFE Proceedings, includes full-length invited papers selected at the conference and reviewed by international leaders. The book is divided into four distinct sections, with the common denominator throughout being the “nano-device”, present under various metamorphoses in the wide CMOS and optoelectronics arena.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

This book brings together seven selected best papers presented at the 2014 Russia-Japan-USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17-21 June 2014.As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments.This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists.

This timely compendium provides state-of-the-art articles covering research areas in Nanoelectronics, Nanophotonics and Quantum Technologies.Composed of contributions by renowned researchers from both the academia and industry, this useful reference text broadly illustrates relevant aspects of high-performance materials and emerging quantum and nanoscale devices for implementing high-speed electronic systems.

This compilation of review articles by leading experts presents clearly the trend in future optoelectronic devices. It is clear that optoelectronic and photonic integration help to further improve high-speed system capabilities and increase the total systems and network capacities with WDM technology. The foundation of the integration technology is based on quantum well materials, and advanced epitaxial growth and device processing techniques. The integrated laser/ modulators, multi-wavelength laser arrays, and OEIC receivers have demonstrated the feasibility of this technology, but much work remains to be done to put such technology to practice.

Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.