OXIDE RELIABILITY: A SUMMARY OF SILICON OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY

Inbunden, Engelska, 2002

Del 23 i serien SELECTED TOPICS IN ELECTRONICS AND SYSTEMS

1 893 kr

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Beskrivning

This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.

Produktinformation

Utgivningsdatum:2002-01-28
Mått:170 x 256 x 20 mm
Vikt:626 g
Format:Inbunden
Språk:Engelska
Serie:SELECTED TOPICS IN ELECTRONICS AND SYSTEMS
Antal sidor:280
Förlag:World Scientific Publishing Co Pte Ltd
ISBN:9789810248420

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Innehållsförteckning

Oxide wearout, breakdown, and reliability, D.J. Dumin; reliability of flash nonvolatile memories, N. Mielke and J. Chen; physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics, J.W. McPherson; breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides, J. Sune et al; MOSFET gate oxide reliability - anode hole injection model and its applications, Y.-C. Yeo et al.