Wide Band Gap Semiconductor Nanowires 2

Heterostructures and Optoelectronic Devices

Inbunden, Engelska, 2014

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Beskrivning

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

Produktinformation

Utgivningsdatum:2014-07-29
Mått:163 x 241 x 28 mm
Vikt:562 g
Format:Inbunden
Språk:Engelska
Antal sidor:368
Förlag:ISTE Ltd and John Wiley & Sons Inc
ISBN:9781848216877

Utforska kategorier

Elektronik och kommunikationer inom Naturvetenskap och teknik

Mer om författaren

Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals. Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.

Innehållsförteckning

PREFACE xiPART 1. GaN AND ZnO NANOWIRE HETEROSTRUCTURES 1CHAPTER 1. AlGaN/GaN NANOWIRE HETEROSTRUCTURES 3Jörg TEUBERT, Jordi ARBIOL and Martin EICKHOFF1.1. A model system for AlGaN/GaN heterostructures 31.2. Axial AlGaN/GaN nanowire heterostructures 41.2.1. Structural properties of axial AlGaN/GaN nanowire heterostructures 51.2.2. Optical properties of axial AlGaN/GaN nanowire heterostructures 81.2.3. Lateral internal electric fields 121.2.4. Axial internal electric fields 141.2.5. Optical characterization of single-AlGaN/GaN nanowires containing GaN nanodisks 151.2.6. Electrical transport properties 181.3. AlGaN/GaN core–shell nanowire heterostructures 191.3.1. Structural properties 201.3.2. Optical characteristics 231.3.3. Electronic properties 241.3.4. True one-dimensional GaN quantum wire second-order self-assembly 281.4. Application examples 291.4.1. AlGaN/GaN nanowire heterostructure optochemical gas sensors 301.4.2. AlGaN/GaN nanowire heterostructure resonant tunneling diodes 331.5. Conclusions 341.6. Bibliography 35CHAPTER 2. InGaN NANOWIRE HETEROSTRUCTURES 41Bruno DAUDIN2.1. Introduction 412.2. Self-assembled InGaN nanowires 432.3. X-ray characterization of InGaN nanowires 462.4. InGaN nanodisks and nanoislands in GaN nanowires 492.5. Selective area growth (SAG) of InGaN nanowires 522.6. Conclusion 552.7. Bibliography 56CHAPTER 3. ZnO-BASED NANOWIRE HETEROSTRUCTURES 61Guy FEUILLET and Pierre FERRET3.1. Introduction 613.2. Designing ZnO-based nanowire heterostructures 633.3. Growth of ZnxMg1-xO/ZnO core–shell heterostructures by metal-organic vapor phase epitaxy 663.4. Misfit relaxation processes in Znx Mg1-xO/ZnO core–shell structures 703.5. Optical efficiency of core–shell oxidebased nanowire heterostructures 733.6. Axial nanowire heterostructures 763.7. Conclusions and perspectives 803.8. Bibliography 81CHAPTER 4. ZnO AND Ga NANOWIRE-BASED TYPE II HETEROSTRUCTURES 85Yong ZHANG4.1. Semiconductor heterostructures 854.2. Type II heterostructures 874.3. Optimal device architecture 884.4. Electronic structure of type II core–shell nanowires 914.5. Synthesis of the type II core–shell nanowires and their signatures 944.6. Demonstration of type II effects in ZnO–ZnSe core–shell nanowires and photovoltaic devices 964.7. Summary 1014.8. Acknowledgments 1024.9. Bibliography 102PART 2. INTEGRATION OF GaN AND ZnO NANOWIRES IN OPTOELECTRONIC DEVICES 105CHAPTER 5. AXIAL GaN NANOWIRE-BASED LEDS 107Qi WANG, Hieu N’GUYEN, Songrui ZHAO and Zetian MI5.1. Introduction 1075.2. Top-down GaN-based axial nanowire LEDs 1085.2.1. Fabrication of top-down GaN-based axial nanowires 1085.2.2. Device fabrication of axial nanowire LEDs 1105.2.3. Performance characteristics of top-down axial nanowire LEDs 1115.3. Bottom-up GaN-based axial nanowire LEDs 1125.3.1. Growth techniques 1125.3.2. Doping, polarity and surface charge properties 1135.3.3. Design and typical performance of bottom-upaxial nanowire LEDs 1145.4. Carrier loss processes of axial nanowire LEDs 1215.4.1. Auger recombination 1215.4.2. Electron overflow 1225.4.3. Surface recombination 1235.5. Controlling carrier loss of GaN-based nanowire LEDs 1245.5.1. p-type modulation doping and AlGaN electron blocking layer 1245.5.2. InGaN/GaN/AlGaN core–shell dot-in-a-wire phosphor-free white LEDs 1265.6. Conclusions 1275.7. Bibliography 127CHAPTER 6. RADIAL GaN NANOWIRE-BASED LEDS 135Shunfeng LI6.1. Radial GaN nanowire-based LED: an emerging device 1356.2. Growth of GaN nanowires and radial nanowire-based devices 1386.3. Radial GaN nanowire-based LED structure 1456.4. Characteristics of radial NW devices 1506.5. Further work and perspectives 1526.6. Bibliography 154CHAPTER 7. GaN NANOWIRE-BASED LASERS 161Xiang ZHOU, Jordan Paul CHESIN and Silvija GRADEÈAK7.1. Introduction to nanowire lasers 1617.2. Theoretical considerations and simulations 1637.3. The first experimental observations of lasing in nanowires 1657.4. GaN nanowire-based lasers 1667.5. Toward wavelength tunability: nanowire lasers based on GaN/InxGa1-xN heterostructures 1697.6. GaN nanowire lasers coupled with hybrid structures 1717.7. Challenges and opportunities 1737.8. Bibliography 175CHAPTER 8. GaN NANOWIRE-BASED ULTRAVIOLET PHOTODETECTORS 179Lorenzo RIGUTTI and Maria TCHERNYCHEVA8.1. Introduction 1798.2. Growth and fabrication techniques 1808.3. GaN nanowire photoconductive detectors 1838.4. p–i–n junction-based GaN nanowire detectors 1878.5. Single-wire GaN/AlN multiple quantum disk photodetectors 1908.6. Single-wire InGaN/GaN core–shell photodetectors 1938.7. Conclusions 1978.8. Acknowledgments 1978.9. Bibliography 198CHAPTER 9. ZnO NANOWIRE-BASED LEDS 203Magnus WILLANDER and Omer NOUR9.1. Outline 2039.2. Introduction 2039.3. Growth of ZnO nanowires 2059.4. White light emission from ZnO nanowires 2099.5. ZnO NW white LEDs on solid crystalline substrates 2129.6. ZnO NWs white LEDs on flexible substrates 2149.7. Enhancing the emission of ZnO nanowire-based LEDs 2209.8. Conclusion and future prospective 2229.9. Bibliography 222CHAPTER 10. ZnO NANOWIRE-BASED SOLAR CELLS 227Jason B. BAXTER10.1. Introduction 22710.1.1. Solar energy conversion and nanostructured solar cells 22710.1.2. Use of ZnO in solar cells 22810.2. ZnO nanowire dye-sensitized solar cells 22910.3. Quantum dot-sensitized nanowire solar cells 23510.4. Extremely thin absorber solar cells 23710.5. Nanowire arrays completely filled with inorganic absorbers 23910.6. ZnO nanorod – organic hybrid solar cells 24110.7. ZnO nanowire arrays for photoelectrochemical water splitting 24410.8. Conclusions 24510.9. Acknowledgments 24710.10. Bibliography 247LIST OF AUTHORS 253