LPCVD Silicon Nitride and Oxynitride Films

This volume reports on ESPRIT Project 369, which concentrated on material obtained by low pressure chemical vapour deposition (LPCVD), and involved measuring and comparing a large number of samples. The papers collected here provide a broad overview of the chemical and physical characteristics of silicon oxynitrides, with special emphasis on the way in which these properties influence the electrical characteristics and behaviour of oxynitrides. The aim of the text is to provide materials scientists and integrated circuit technologists with enough information to consider this class of materials for application in integrated circuit technology.