Advances in Scanning Probe Microscopy

Inbunden, Engelska, 2000

Del i serien Advances in Materials Research

1 104 kr

Beställningsvara. Skickas inom 10-15 vardagar. Fri frakt över 249 kr.

Beskrivning

This book covers several of the most important topics of current interest at the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

Produktinformation

Utgivningsdatum:2000-03-27
Mått:155 x 235 x 24 mm
Vikt:705 g
Format:Inbunden
Språk:Engelska
Serie:Advances in Materials Research
Antal sidor:343
Upplaga:2000
Förlag:Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
ISBN:9783540667186

Utforska kategorier

Innehållsförteckning

1 Theory of Scanning Probe Microscopy.- 1.1 Introduction.- 1.2 Scanning Tunneling Microscopy.- 1.3 Frictional Force Microscopy.- 1.4 Dynamic-Mode Atomic Force Microscopy.- 1.5 Non-Contact Mode Atomic Force Microscopy.- 1.6 Conclusion.- References.- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces.- 2.1 Introduction.- 2.2 Computational Methods.- 2.3 Surface Structures.- 2.4 Surface Dynamics.- References.- 3 Atomic Structure of 6H-SiC (0001) and (000$$\bar{1}$$).- 3.1 Introduction.- 3.2 Surface Preparation.- 3.3 Surface Structure of 6H-SiC (0001) and (000$$\bar{1}$$).- 3.4 Surface Phonons of 6H-SiC (0001).- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces.- 3.6 Conclusions.- References.- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces.- 4.1 Introduction.- 4.2 Experimental Aspects.- 4.3 Property Changes in the Si(111)?7x7 Surface.- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface.- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication.- 4.6 Conclusion.- References.- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies.- 5.1 Introduction.- 5.2 Fullerene Research Background.- 5.3 Universal Features of C60 and C70 STM Images.- 5.4 Dipole Field Caused by Charge Transfer.- 5.5 Photo-Induced Excited States.- 5.6 Conclusion.- Appendix: All-Electron Mixed Basis Approach.- References.- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces.- 6.1 Introduction.- 6.2 Properties of Barrier Height.- 6.3 Measurements of Barrier Height.- 6.4 Barrier-Height Imaging.- 6.5 Applications of BHImaging.- References.- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy.- 7.1 Introduction.- 7.2 Work Function.- 7.3 Experimental Techniques.- 7.4 Results.- 7.5 Conclusion.- References.- 8 Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces.- 8.1 Introduction.- 8.2 Semiconductor Surface Reconstruction.- 8.3 GaAs(001) As-Rich Surface.- 8.4 GaAs(001) Ga-Rich Surface.- 8.5 Other Arsenide (001) Surfaces.- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces.- 8.7 Conclusions.- References.- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy.- 9.1 Introduction.- 9.2 Experiment.- 9.3 Results and Discussions on Semiconductor Substrates.- 9.4 Results and Discussions on Metal Substrates.- 9.5 Conclusions.- References.

Du kanske också är intresserad av

Del 2

Advances in Scanning Probe Microscopy

T. Sakurai, Y. Watanabe

Häftad, 2012

1 104 kr

Advances in Scanning Probe Microscopy

Y. Watanabe, T. Sakurai

E-bok

2012

1 427 kr

Nanoscale Spectroscopy and Its Applications to Semiconductor Research

N. Yamamoto, G. Salviati, S. Heun, Y. Watanabe

E-bok

2008

1 427 kr

Fatigue Science for Human Health

Y. Watanabe, B. Evengard, B.H. Natelson, L.A. Jason, H. Kuratsune

Häftad, 2010

1 137 kr

C. L. Berry, J. Nesland, J. Prat, W. Böcker, H. Cottier, P. J. Dawson, H. Denk, C. M. Fenoglio-Preiser, P. U. Heitz, O. H. Iversen, U. Löhrs, F. Nogales, U. Pfeifer, N. Sasano, G. Seifert, J. C. E. Underwood, Y. Watanabe - Pulmonary Hypertension Related to Aminorex Intake DNA Injuries, Their Repair, and Carcinogenesis Soft Tissue Tumors in the Rat Visceral Candidosis, Häftad

Del 64

Pulmonary Hypertension Related to Aminorex Intake DNA Injuries, Their Repair, and Carcinogenesis Soft Tissue Tumors in the Rat Visceral Candidosis

C. L. Berry, J. Nesland, J. Prat, W. Böcker, H. Cottier, P. J. Dawson, H. Denk, C. M. Fenoglio-Preiser, P. U. Heitz, O. H. Iversen, U. Löhrs, F. Nogales, U. Pfeifer, N. Sasano, G. Seifert, J. C. E. Underwood, Y. Watanabe

Häftad, 2011

1 703 kr

Pulmonary Hypertension Related to Aminorex Intake DNA Injuries, Their Repair, and Carcinogenesis Soft Tissue Tumors in the Rat Visceral Candidosis

Y. Watanabe, J. C. E. Underwood, G. Seifert, N. Sasano, U. Pfeifer, F. Nogales, U. Lohrs, O. H. Iversen, P. U. Heitz, C. M. Fenoglio-Preiser, H. Denk, P. J. Dawson, H. Cottier, W. Bocker, J. Prat, J. Nesland, C. L. Berry

E-bok

2012

2 127 kr

Nanoscale Spectroscopy and Its Applications to Semiconductor Research

Y. Watanabe, S. Heun, G. Salviati, N. Yamamoto

Inbunden, 2002

1 104 kr

Nanoscale Spectroscopy and Its Applications to Semiconductor Research

Y. Watanabe, S. Heun, G. Salviati, N. Yamamoto

Häftad, 2013

1 104 kr

Calcium Ion Modulators

Y Watanabe, I Kazuhide

E-bok

2024

3 088 kr

Calcium Ion Modulators

Y Watanabe, I Kazuhide

E-bok

2024

3 056 kr

Advances in Scanning Probe Microscopy

AvT. Sakurai,Y. Watanabe

Inbunden, Engelska, 2000

Del i serien Advances in Materials Research

1 104 kr

Beställningsvara. Skickas inom 10-15 vardagar. Fri frakt över 249 kr.

Beskrivning

Produktinformation

Utgivningsdatum:2000-03-27
Mått:155 x 235 x 24 mm
Vikt:705 g
Format:Inbunden
Språk:Engelska
Serie:Advances in Materials Research
Antal sidor:343
Upplaga:2000
Förlag:Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
ISBN:9783540667186

Utforska kategorier

Innehållsförteckning

1 Theory of Scanning Probe Microscopy.- 1.1 Introduction.- 1.2 Scanning Tunneling Microscopy.- 1.3 Frictional Force Microscopy.- 1.4 Dynamic-Mode Atomic Force Microscopy.- 1.5 Non-Contact Mode Atomic Force Microscopy.- 1.6 Conclusion.- References.- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces.- 2.1 Introduction.- 2.2 Computational Methods.- 2.3 Surface Structures.- 2.4 Surface Dynamics.- References.- 3 Atomic Structure of 6H-SiC (0001) and (000$$\bar{1}$$).- 3.1 Introduction.- 3.2 Surface Preparation.- 3.3 Surface Structure of 6H-SiC (0001) and (000$$\bar{1}$$).- 3.4 Surface Phonons of 6H-SiC (0001).- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces.- 3.6 Conclusions.- References.- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces.- 4.1 Introduction.- 4.2 Experimental Aspects.- 4.3 Property Changes in the Si(111)?7x7 Surface.- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface.- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication.- 4.6 Conclusion.- References.- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies.- 5.1 Introduction.- 5.2 Fullerene Research Background.- 5.3 Universal Features of C60 and C70 STM Images.- 5.4 Dipole Field Caused by Charge Transfer.- 5.5 Photo-Induced Excited States.- 5.6 Conclusion.- Appendix: All-Electron Mixed Basis Approach.- References.- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces.- 6.1 Introduction.- 6.2 Properties of Barrier Height.- 6.3 Measurements of Barrier Height.- 6.4 Barrier-Height Imaging.- 6.5 Applications of BHImaging.- References.- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy.- 7.1 Introduction.- 7.2 Work Function.- 7.3 Experimental Techniques.- 7.4 Results.- 7.5 Conclusion.- References.- 8 Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces.- 8.1 Introduction.- 8.2 Semiconductor Surface Reconstruction.- 8.3 GaAs(001) As-Rich Surface.- 8.4 GaAs(001) Ga-Rich Surface.- 8.5 Other Arsenide (001) Surfaces.- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces.- 8.7 Conclusions.- References.- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy.- 9.1 Introduction.- 9.2 Experiment.- 9.3 Results and Discussions on Semiconductor Substrates.- 9.4 Results and Discussions on Metal Substrates.- 9.5 Conclusions.- References.