Cher Ming Tan – författare

Reliability and Failure Analysis of High-Power LED Packaging provides fundamental understanding of the reliability and failure analysis of materials for high-power LED packaging, with the ultimate goal of enabling new packaging materials. This book describes the limitations of the present reliability standards in determining the lifetime of high-power LEDs due to the lack of deep understanding of the packaging materials and their interaction with each other. Many new failure mechanisms are investigated and presented with consideration of the different stresses imposed by varying environmental conditions. The detailed failure mechanisms are unique to this book and will provide insights for readers regarding the possible failure mechanisms in high-power LEDs.

The authors also show the importance of simulation in understanding the hidden failure mechanisms in LEDs. Along with simulation, the use of various destructive and non-destructive tools such as C-SAM, SEM, FTIR, Optical Microscopy, etc. in investigation of the causes of LED failures are reviewed. The advancement of LEDs in the last two decades has opened vast new applications for LEDs which also has led to harsher stress conditions for high-power LEDs. Thus, existing standards and reliability tests need to be revised to meet the new demands for high-power LEDs.

Introduces the failure mechanisms of high-power LEDs under varying environmental conditions and methods of how to test, simulate, and predict them Describes the chemistry underlying the material degradation and its impact on LEDs Discusses future directions of new packaging materials for improved performance and reliability of high-power LEDs

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability.

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics.To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will:introduce the principle of FEMs;review numerical modeling of ULSI interconnect reliability;describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; anddiscuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method.A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included.Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.

This book discusses the application of quality and reliability engineering in Asian industries, and offers information for multinational companies (MNC) looking to transfer some of their operation and manufacturing capabilities to Asia and at the same time maintain high levels of reliability and quality. It is also provides small and medium enterprises (SME) in Asia with insights into producing high-quality and reliable products. It mainly comprises peer-reviewed papers that were presented at the Asian Network for Quality (ANQ) Congress 2014 held in Singapore (August, 2014), which provides a platform for companies, especially those within Asia where rapid changes and growth in manufacturing are taking place, to present their quality and reliability practices. The book presents practical demonstrations of how quality and reliability methodologies can be modified for the unique Asian market, and as such is a valuable resource for students, academics, professionals and practitioners inthe field of quality and reliability.

This book discusses the application of quality and reliability engineering in Asian industries, and offers information for multinational companies (MNC) looking to transfer some of their operation and manufacturing capabilities to Asia and at the same time maintain high levels of reliability and quality.

Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels.