Zhenghao Gan – författare

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Proven processes for ensuring semiconductor device reliability

Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.

Coverage includes:

Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown

Proven processes for ensuring semiconductor device reliability

Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.

Coverage includes:

Basic device physicsProcess flow for MOS manufacturingMeasurements useful for device reliability characterizationHot carrier injectionGate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB)Negative bias temperature instabilityPlasma-induced damageElectrostatic discharge protection of integrated circuitsElectromigrationStress migrationIntermetal dielectric breakdown

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics.To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will:introduce the principle of FEMs;review numerical modeling of ULSI interconnect reliability;describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; anddiscuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method.A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included.Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics.

To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will:

introduce the principle of FEMs;review numerical modeling of ULSI interconnect reliability;describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; anddiscuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method.

A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included.

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.