Ion Implantation: Basics to Device Fabrication

This text presents a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channelling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide: two-dimensional profiles of damage and of dopants; a careful treatment of silicon based devices; threshold voltage control; shallow junctions; minority carrier lifetime control by metallic ion implants; and high energy implants is given in this work. Based on a course preceding the biannual Ion Implantation Technology Conference, this book should be a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.