Paul S. Ho – författare

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirementsLow-k materials: fundamentals, advances and mechanical  propertiesConductive layers and barriersIntegration and reliability including mechanical reliability, electromigration and electrical breakdownNew approaches including 3D, optical, wireless interchip, and carbon-based interconnectsIntended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance.

Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses:

Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical  properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects

Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance.

Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses:

Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical  properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects

Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.