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Produktinformation
- Utgivningsdatum:2018-08-31
- Mått:203 x 257 x 28 mm
- Vikt:1 293 g
- Format:Inbunden
- Språk:Engelska
- Serie:Wiley Series in Display Technology
- Antal sidor:496
- Förlag:John Wiley & Sons Inc
- ISBN:9781119161349
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JUN SOUK, PHD is a Professor in the Department of Electronic Engineering, Hanyang University, South Korea. SHINJI MOROZUMI, PHD is the founder and chairman of Crystage Inc., Japan. FANG-CHEN LUO, PHD is advisor to the President and Fellow of AU Optronics, Taiwan. ION BITA, PHD leads development of display technologies and components at Apple Inc., USA.
Recensioner i media
"If there is only one book on flat panel displays that is going to be on your bookshelf, then I would highly recommend this one. It will be a text that you refer to time and again for clear and concise explanations of how LCD and OLED displays are constructed and the processes used to make them into commercially successful products. As you use it, you will find yourself drawn in by the clear and colorful illustrations and will find it hard to not read more than you first intended." Aris Silzars Ph.D., Member of the Board of Advisors, NanoLumens, Inc. and Past President of SID, USA
Innehållsförteckning
- List of Contributors xxiSeries Editor’s Foreword xxvPreface xxvii1 Introduction 1Fang‐Chen Luo, Jun Souk, Shinji Morozumi, and Ion Bita1.1 Introduction 11.2 Historic Review of TFT‐LCD Manufacturing Technology Progress 11.2.1 Early Stage TFT and TFT‐Based Displays 21.2.2 The 1990s: Initiation of TFT‐LCD Manufacturing and Incubation of TFT‐LCD Products 21.2.3 Late 1990s: Booming of LCD Desktop Monitor and Wide Viewing Angle Technologies 41.2.4 The 2000s: A Golden Time for LCD‐TV Manufacturing Technology Advances 41.3 Analyzing the Success Factors in LCD Manufacturing 51.3.1 Scaling the LCD Substrate Size 71.3.2 Major Milestones in TFT‐LCD Manufacturing Technology 91.3.2.1 First Revolution: AKT Cluster PECVD Tool in 1993 91.3.2.2 Second Revolution: Wide Viewing Angle Technology in 1997 91.3.2.3 Third Revolution: LC Drop Filling Technology in 2003 101.3.3 Major Stepping Stones Leading to the Success of Active Matrix Displays 10References 112 TFT Array Process Architecture and Manufacturing Process Flow 13Chiwoo Kim2.1 Introduction 132.2 Material Properties and TFT Characteristics of a‐Si, LTPS, and Metal Oxide TFTs 152.2.1 a‐Si TFT 152.2.2 LTPS TFT 162.2.2.1 Excimer Laser Annealing (ELA) 172.2.3 Amorphous Oxide Semiconductor TFTs 222.3 a‐Si TFT Array Process Architecture and Process Flow 222.3.1 Four‐Mask Count Process Architecture for TFT‐LCDs 242.4 Poly‐Si TFT Architecture and Fabrication 272.5 Oxide Semiconductor TFT Architecture and Fabrication 302.6 TFT LCD Applications 322.7 Development of SLS‐Based System on Glass Display [1, 11, 14, 15] 33References 353 Color Filter Architecture, Materials, and Process Flow 39Young Seok Choi, Musun Kwak, and Youn Sung Na3.1 Introduction 393.2 Structure and Role of the Color Filter 393.2.1 Red, Green, and Blue (RGB) Layer 403.2.1.1 Color Coordinate and Color Gamut 413.2.2 Black Matrix 443.2.3 Overcoat and Transparent Electrode 453.2.4 Column Spacer 463.3 Color Filter Manufacturing Process Flow 463.3.1 Unit Process 463.3.1.1 Formation of Black Matrix 463.3.1.2 Formation of RGB Layer 483.3.1.3 Overcoat (OC) 513.3.1.4 Formation of ITO Electrodes 533.3.1.5 Column Spacer (Pattern Spacer) 533.3.2 Process Flow for Different LC Mode 543.3.2.1 Color Filter for the TN Mode 543.3.2.2 Color Filter for the IPS Mode 543.3.2.3 Color Filter for the VA Mode 553.4 New Color Filter Design 553.4.1 White Color (Four Primary Colors) Technology 553.4.2 Color Filter on TFT 56References 574 Liquid Crystal Cell Process 59Heung‐Shik Park and Ki‐Chul Shin4.1 Introduction 594.2 Liquid Crystal Cell Process 594.2.1 Alignment Layer Treatment 614.2.2 Process of Applying PI Layers 624.2.3 Rubbing Process 634.2.4 Photo‐Alignment Process 644.2.5 LC Filling Process 654.2.5.1 Vacuum Filling Method 664.2.5.2 End Seal Process 664.2.5.3 One Drop Filling (ODF) Method 674.2.6 Vacuum Assembly Process 684.2.7 Polarizer Attachment Process 694.3 Conclusions 70Acknowledgments 70References 705 TFT‐LCD Module and Package Process 73Chun Chang Hung5.1 Introduction 735.2 Driver IC Bonding: TAB and COG 735.3 Introduction to Large‐Panel JI Process 745.3.1 COF Bonding 755.3.1.1 Edge Clean 755.3.1.2 ACF Attachment 765.3.1.3 COF Pre‐Bonding 775.3.1.4 COF Main Bonding 785.3.1.5 Lead Check 785.3.1.6 Silicone Dispensing 785.3.2 PCB Bonding 795.3.3 PCB Test 795.3.4 Press Heads: Long Bar or Short Bar 795.4 Introduction to Small‐Panel JI Process 795.4.1 Beveling 805.4.2 Panel Cleaning 805.4.3 Polarizer Attachment 805.4.4 Chip on Glass (COG) Bonding 815.4.5 FPC on Glass (FOG) Bonding 815.4.6 Optical Microscope (OM) Inspection 815.4.7 UV Glue Dispense 825.4.8 Post Bonding Inspection (PBI) 825.4.9 Protection Glue Dispensing 825.5 LCD Module Assembly 835.6 Aging 845.7 Module in Backlight or Backlight in Module 85References 866 LCD Backlights 87Insun Hwang and Jae‐Hyeon Ko6.1 Introduction 876.2 LED Sources 906.2.1 GaN Epi‐Wafer on Sapphire 926.2.2 LED Chip 936.2.3 Light Extraction 946.2.4 LED Package 966.2.5 SMT on FPCB 976.3 Light Guide Plate 986.3.1 Optical Principles of LGP 986.3.2 Optical Pattern Design 996.3.3 Manufacturing of LGP 1016.3.3.1 Injection Molding 1016.3.3.2 Screen Printing 1026.3.3.3 Other Methods 1036.4 Optical Films 1046.4.1 Diffuser 1066.4.2 Prism Film 1076.4.3 Reflector 1086.4.4 Other Films 1086.5 Direct‐Type BLU 1116.6 Summary 111References 1127 TFT Backplane and Issues for OLED 115Chiwoo Kim7.1 Introduction 1157.2 LTPS TFT Backplane for OLED Films 1167.2.1 Advanced Excimer Laser Annealing (AELA) for Large‐Sized AMOLED Displays 1177.2.2 Line‐Scan Sequential Lateral Solidification Process for AMOLED Application 1207.3 Oxide Semiconductor TFT for OLED 1227.3.1 Oxide TFT–Based OLED for Large‐Sized TVs 1237.4 Best Backplane Solution for AMOLED 125References 1278A OLED Manufacturing Process for Mobile Application 129Jang Hyuk Kwon and Raju Lampande8A.1 Introduction 1298A.2 Current Status of AMOLED for Mobile Display 1308A.2.1 Top Emission Technology 1308A.3 Fine Metal Mask Technology (Shadow Mask Technology) 1338A.4 Encapsulation Techniques for OLEDs 1358A.4.1 Frit Sealing 1358A.4.2 Thin‐Film Encapsulation 1368A.5 Flexible OLED technology 1378A.6 AMOLED Manufacturing Process 1378A.7 Summary 140References 1408B OLED Manufacturing Process for TV Application 143Chang Wook Han and Yoon Heung Tak8B.1 Introduction 1438B.2 Fine Metal Mask (FMM) 1448B.3 Manufacturing Process for White OLED and Color Filter Methods 1478B.3.1 One‐Stacked White OLED Device 1498B.3.2 Two‐Stacked White OLED Device 1528B.3.3 Three‐Stacked White‐OLED Device 155References 1579 OLED Encapsulation Technology 159Young‐Hoon Shin9.1 Introduction 1599.2 Principles of OLED Encapsulation 1599.2.1 Effect of H2O 1609.3 Classification of Encapsulation Technologies 1629.3.1 Edge Seal 1639.3.2 Frit Seal 1649.3.3 Dam and Fill 1669.3.4 Face Seal 1679.3.5 Thin‐Film Encapsulation (TFE) 1689.4 Summary 170References 17010 Flexible OLED Manufacturing 173Woojae Lee and Jun Souk10.1 Introduction 17310.2 Critical Technologies in Flexible OLED Display 17410.2.1 High‐Temperature PI Film 17510.2.2 Encapsulation Layer 17610.2.2.1 Thin‐Film Encapsulation (TFE) Method 17610.2.2.2 Hyrid Encapsulation Method 17710.2.2.3 Other Encapsulation Methods 17810.2.2.4 Measurement of Barrier Performance 17910.2.3 Laser Lift‐Off 18010.2.4 Touch Sensor on F‐OLED 18110.3 Process Flow of F‐OLED 18110.3.1 PI Film Coating and Curing 18110.3.2 LTPS TFT Backplane Process 18310.3.3 OLED Deposition Process 18310.3.4 Thin‐Film Encapsulation 18510.3.5 Laser Lift‐Off 18510.3.6 Lamination of Backing Plastic Film and Cut to Cell Size 18510.3.7 Touch Sensor Attach 18610.3.8 Circular Polarizer Attach 18610.3.9 Module Assembly (Bonding Drive IC) 18610.4 Foldable OLED 18610.5 Summary 188References 18911A Metal Lines and ITO PVD 193Hyun Eok Shin, Chang Oh Jeong, and Junho Song11A.1 Introduction 19311A.1.1 Basic Requirements of Metallization for Display 19311A.1.2 Thin‐Film Deposition by Sputtering 19511A.2 Metal Line Evolution in Past Years of TFT‐LCD 19811A.2.1 Gate Line Metals 19911A.2.1.1 Al and Al Alloy Electrode 19911A.2.1.2 Cu Electrode 20111A.2.2 Data line (Source/Drain) Metals 20211A.2.2.1 Data Al Metal 20211A.2.2.2 Data Cu Metal 20311A.2.2.3 Data Chromium (Cr) Metal 20311A.2.2.4 Molybdenum (Mo) Metal 20311A.2.2.5 Titanium (Ti) Metal 20411A.3 Metallization for OLED Display 20511A.3.1 Gate Line Metals 20511A.3.2 Source/Drain Metals 20511A.3.3 Pixel Anode 20611A.4 Transparent Electrode 207References 20811B Thin‐Film PVD: Materials, Processes, and Equipment 209Tetsuhiro Ohno11B.1 Introduction 20911B.2 Sputtering Method 21011B.3 Evolution of Sputtering Equipment for FPD Devices 21211B.3.1 Cluster Tool for Gen 2 Size 21211B.3.2 Cluster Tool for Gen 4.5 to Gen 7 Size 21311B.3.3 Vertical Cluster Tool for Gen 8 Size 21311B.4 Evolution of Sputtering Cathode 21511B.4.1 Cathode Structure Evolution 21511B.4.2 Dynamic Multi Cathode for LTPS 21711B.4.3 Cathode Selection Strategy 21711B.5 Transparent Oxide Semiconductor (TOS) Thin‐Film Deposition Technology 21811B.5.1 Deposition Equipment for TOS‐TFT 21811B.5.2 New Cathode Structure for TOS‐TFT 21911B.6 Metallization Materials and Deposition Technology 221References 22311C Thin‐Film PVD (Rotary Target) 225Marcus Bender11C. 1 Introduction 22511C.2 Source Technology 22711C.2.1 Planar Cathodes 22711C.2.2 Rotary Cathodes 22911C.2.3 Rotary Cathode Array 23011C.3 Materials, Processes, and Characterization 23211C.3.1 Introduction 23211C.3.2 Backplane Metallization 23211C.3.3 Layers for Metal‐Oxide TFTs 23411C.3.4 Transparent Electrodes 23611C.3.5 Adding Touch Functionality and Improving End‐User Experience 238References 23912A Thin‐Film PECVD (AKT) 241Tae Kyung Won, Soo Young Choi, and John M. White12A.1 Introduction 24112A.2 Process Chamber Technology 24312A.2.1 Electrode Design 24312A.2.1.1 Hollow Cathode Effect and Hollow Cathode Gradient 24312A.2.1.2 Gas Flow Control 24512A.2.1.3 Susceptor 24512A.2.2 Chamber Cleaning 24612A.3 Thin‐Film Material, Process, and Characterization 24812A.3.1 Amorphous Si (a‐Si) TFT 24812A.3.1.1 Silicon Nitride (SiN) 24812A.3.1.2 Amorphous Silicon (a‐Si) 25312A.3.1.3 Phosphorus‐Doped Amorphous Silicon (n+ a‐Si) 25712A.3.2 Low‐Temperature Poly Silicon (LTPS) TFT 25812A.3.2.1 Silicon Oxide (SiO) 25912A.3.2.2 a‐Si Precursor Film (Dehydrogenation) 26012A.3.3 Metal‐Oxide (MO) TFT 26312A.3.3.1 Silicon Oxide (SiO) 26512A.3.4 Thin‐Film Encapsulation (TFE) 26912A.3.4.1 Barrier Layer (Silicon Nitride) 26912A.3.4.2 Buffer Layer 271References 27112B Thin‐Film PECVD (Ulvac) 273Masashi Kikuchi12B.1 Introduction 27312B.2 Plasma of PECVD 27312B.3 Plasma Modes and Reactor Configuration 27312B.3.1 CCP‐Type Reactor 27412B.3.2 Microwave‐Type Reactor 27412B.3.3 ICP‐Type Reactor 27512B.4 PECVD Process for Display 27612B.4.1 a‐Si Film for a‐Si TFT 27612B.4.2 a‐Si Film for LTPS 27712B.4.3 SiNx Film 27812B.4.4 TEOS SiO2 Film 27912B.5 PECVD System Overview 27912B.6 Remote Plasma Cleaning 27912B.6.1 Gas Flow Style of Remote Plasma Cleaning 28112B.6.2 Cleaning and Corrosion 28112B.7 Passivation Layer for OLED 28212B.7.1 Passivation by Single/Double/Multi‐Layer 28212B.8 PECVD Deposition for IGZO TFT 28312B.8.1 Gate Insulator for IGZO TFT 28312B.8.2 Passivation Film for IGZO TFT 28412B.9 Particle Generation 284References 28613 Photolithography 287Yasunori Nishimura, Kozo Yano, Masataka Itoh, and Masahiro Ito13.1 Introduction 28713.2 Photolithography Process Overview 28813.2.1 Cleaning 28913.2.2 Preparation 28913.2.3 Photoresist Coating 28913.2.4 Exposure 28913.2.5 Development 28913.2.6 Etching 28913.2.7 Resist Removal 28913.3 Photoresist Coating 29013.3.1 Evolution of Photoresist Coating 29013.3.2 Slit Coating 29013.3.2.1 Principles of Slit Coating 29013.3.2.2 Slit‐Coating System 29113.4 Exposure 29213.4.1 Photoresist and Exposure 29213.4.1.1 Photoresist 29213.4.1.2 Color Resist 29213.4.1.3 UV Light Source for Exposure 29213.4.2 General Aspects of Exposure Systems 29213.4.3 Stepper 29313.4.4 Projection Scanning Exposure System 29413.4.5 Mirror Projection Scan System (Canon) 29613.4.6 Multi‐Lens Projection System (Nikon) 29613.4.6.1 Multi‐Lens Optics 29613.4.6.2 Multi‐Lens Projection System 29613.4.7 Proximity Exposure 29713.5 Photoresist Development 30013.6 Inline Photolithography Processing Equipment 30113.7 Photoresist Stripping 30213.8 Photolithography for Color Filters 30313.8.1 Color Filter Structures 30313.8.1.1 TN 30413.8.1.2 VA 30413.8.1.3 IPS 30413.8.2 Materials for Color Filters 30513.8.2.1 Black Matrix Materials 30513.8.2.2 RGB Color Materials 30513.8.2.3 PS (Photo Spacer) Materials 30613.8.3 Photolithography Process for Color Filters 30713.8.3.1 Color Resist Coating 30713.8.3.2 Exposure 30713.8.3.3 Development 30813.8.4 Higher‐Performance Color Filters 30913.8.4.1 Mobile Applications 30913.8.4.2 TV Applications 309References 31014A Wet Etching Processes and Equipment 311Kazuo Jodai14A.1 Introduction 31114A.2 Overview of TFT Process 31214A.3 Applications and Equipment of Wet Etching 31314A.3.1 Applications 31314A.3.2 Equipment (Outline) 31314A.3.3 Substrate Transferring System 31514A.3.4 Dip Etching System 31614A.3.5 Cascade Rinse System 31614A.4 Problems Due to Increased Mother Glass Size and Solutions 31714A.4.1 Etchant Concentration Management 31714A.4.2 Quick Rinse 31714A.4.3 Other Issues 31814A.5 Conclusion 318References 31814B Dry Etching Processes and Equipment 319Ippei Horikoshi14B.1 Introduction 31914B.2 Principle of Dry Etching 31914B.2.1 Plasma 32014B.2.2 Ions 32114B.2.3 Radicals 32114B.3 Architecture for Dry Etching Equipment 32214B.4 Dry Etching Modes 32314B.4.1 Conventional Etching Mode and Each Characteristic 32414B.4.2 Current Etching Mode and Each Characteristic 32514B.5 TFT Process 32514B.5.1 a‐Si Process 32514B.5.2 LTPS Process 32614B.5.3 Oxide Process 327References 32815 TFT Array: Inspection, Testing, and Repair 329Shulik Leshem, Noam Cohen, Savier Pham, Mike Lim, and Amir Peled15.1 Defect Theory 32915.1.1 Typical Production Defects 32915.1.1.1 Pattern Defects 32915.1.1.2 Foreign Particles 33115.1.2 Understanding the Nature of Defects 33215.1.2.1 Critical and Non‐Critical Defects 33215.1.2.2 Electrical and Non‐Electrical Defects 33315.1.3 Effect of Defects on Final FPD Devices and Yields 33315.2 AOI (Automated Optical Inspection) 33415.2.1 The Need 33415.2.2 AOI Tasks, Functions, and Sequences 33515.2.2.1 Image Acquisition 33515.2.2.2 Defect Detection 33615.2.2.3 Defect Classification 33615.2.2.4 Review Image Grabbing 33715.2.2.5 Defect Reporting and Judgment 33715.2.3 AOI Optical Concept 33715.2.3.1 Image Quality Criteria 33815.2.3.2 Scan Cameras 33915.2.3.2.1 Camera Type 33915.2.3.2.2 Resolution Changer 33915.2.3.2.3 Backside Inspection 33915.2.3.3 Scan Illumination 33915.2.3.3.1 Types of Illumination 33915.2.3.4 Video Grabbing for Defect Review and Metrology 34015.2.3.4.1 Review/Metrology Cameras 34015.2.3.4.2 On‐the‐Fly Video Grabbing 34015.2.3.4.3 Alternative to Video Images 34015.2.4 AOI Defect Detection Principles 34115.2.4.1 Gray Level Concept 34215.2.4.2 Comparison of Gray Level Values Between Neighboring Cells 34215.2.4.3 Detection Sensitivity 34215.2.4.4 Detection Selectivity 34415.2.5 AOI Special Features 34415.2.5.1 Detection of Special Defect Types 34415.2.5.2 Inspection of In‐Cell Touch Panels 34515.2.5.3 Peripheral Area Inspection 34615.2.5.4 Mura Defects 34615.2.5.5 Cell Process Inspection 34715.2.5.6 Defect Classification 34715.2.5.7 Metrology: CD/O Measurement 34915.2.5.8 Automatic Judgment 35015.2.6 Offline Versus Inline AOI 35015.2.7 AOI Usage, Application and Trends 35115.3 Electrical Testing 35215.3.1 The Need 35215.3.2 Array Tester Tasks, Functions, and Sequences 35315.3.2.1 Panel Signal Driving 35315.3.2.1.1 Shorting Bar Probing Method 35415.3.2.1.2 Full Contact Probing Method 35415.3.2.2 Contact or Non‐Contact Sensing 35415.3.2.2.1 Contact Sensing 35515.3.2.2.2 Non‐Contact Sensing Methods 35515.3.2.3 Panel Image Processing and Defect Detection 35515.3.2.4 Post‐Defect Detection Processes 35515.3.3 Array Tester System Design Concept 35615.3.3.1 Signal Driving Probing 35715.3.3.2 Ultra‐High‐Resolution Testing 35715.3.3.3 System TACT 35815.3.3.4 “High‐Channel” Testing 35815.3.3.5 Advanced Process Technology Testing (AMOLED, FLEX OLED) 35815.3.4 Array Tester Special Features 35915.3.4.1 GOA, ASG, and IGD Testing 35915.3.4.2 Electro Mura Monitoring 35915.3.4.3 Free‐Form Panel Testing 36115.3.5 Array Tester Usage, Application, and Trends 36115.3.5.1 Source Drain Layer Testing for LTPS LCD/OLED 36215.3.5.2 New Probing Concept 36315.3.5.3 In‐Cell Touch Panel Testing 36315.4 Defect Repair 36315.4.1 The Need 36315.4.2 Repair System in the Production Process 36415.4.2.1 In‐Process Repair 36415.4.2.2 Final Repair 36415.4.3 Repair Sequence 36415.4.4 Short‐Circuit Repair Method 36515.4.4.1 Laser Ablation Concept 36515.4.4.1.1 Thermal Ablation 36615.4.4.1.2 Cold Ablation 36615.4.4.1.3 Photochemical Ablation 36615.4.4.2 Laser Light Wavelengths and their Typical Applications 36615.4.4.2.1 Laser Matter Interaction 36615.4.4.2.2 Using DUV Laser Light (266 nm) for Short‐Circuit Defect Repair 36715.4.4.2.3 Using Infrared Laser Light (1,064 nm) for Short‐Circuit Defect Repair 36715.4.4.3.4 Using Green Laser Light (532 nm) for Short‐Circuit Defect Repair 36715.4.4.3 Typical Applications of the Short‐Circuit Repair Method 36715.4.4.3.1 Cutting 36715.4.4.3.2 Welding 36815.4.5 Open‐Circuit Repair Method 36915.4.5.1 LCVD (Laser Chemical Vapor Deposition) 36915.4.5.2 Metal Ink Deposition Repair 37015.4.5.2.1 Dispensing 37015.4.5.2.2 Metal Inkjet Deposition 37015.4.5.2.3 LIFT (Laser‐Induced Forward Transfer) Deposition 37115.4.5.3 Main Applications of the Deposition Repair (Open‐Circuit Repair) 37215.4.6 Photoresist (PR) Repair 37215.4.6.1 Main Applications of the Photoresist Repair 37315.4.6.2 Photoresist Repair Technology 37315.4.6.2.1 Using DMD for Patterning 37315.4.6.2.2 Using FSM for Patterning 37315.4.7 Special Features of the Repair System 37515.4.7.1 Line Defect Locator (LDL) 37515.4.7.2 Parallel Repair Mode for Maximum System Throughput 37515.4.8 Repair Technology Trends 37615.4.8.1 Cold Ablation 37615.4.8.2 Full Automatic Repair Solution 37715.4.9 Summary 37716 LCM Inspection and Repair 379Chun Chang Hung 37916.1 Introduction 37916.2 Functional Defects Inspection 37916.3 Cosmetic Defects Inspection 38116.4 Key Factors for Proper Inspection 38316.4.1 Variation Between Inspectors 38316.4.2 Testing Environments 38516.4.3 Inspection Distance, Viewing Angle, and Sequence of Test Patterns 38516.4.4 Characteristics of Product and Components 38716.5 Automatic Optical Inspection (AOI) 38816.6 LCM Defect Repair 388References 39117 Productivity and Quality Control Overview 393Kozo Yano, Yasunori Nishimura, and Masataka Itoh17.1 Introduction 39317.2 Productivity Improvement 39417.2.1 Challenges for Productivity Improvement 39417.2.2 Enlargement of Glass Substrate 39517.2.2.1 Productivity Improvement and Cost Reduction by Glass Size Enlargement 39717.3 Yield Management 39917.3.1 Yield Analysis 39917.3.1.1 Inspection and Yield 39917.3.1.2 Failure Mode Analysis 40117.3.2 Yield Improvement Activity 40417.3.2.1 Process Yield Improvement 40417.3.2.2 Systematic Failure Minimization 40417.3.2.3 Random Failure Minimization by Clean Process 40417.3.2.4 Yield Improvement by Repairing 40617.4 Quality Control System 40617.4.1 Materials (IQC) 40717.4.2 Facility Control 40817.4.3 Process Quality Control 40817.4.3.1 TFT Array Process 40917.4.3.2 Color Filter Process 41017.4.3.3 LCD Cell Process 41217.4.3.4 Modulization Process 41217.4.4 Organization and Key Issues for Quality Control 413References 41718 Plant Architectures and Supporting Systems 419Kozo Yano and Michihiro Yamakawa18.1 Introduction 41918.2 General Issues in Plant Architecture 42018.2.1 Plant Overview 42018.2.2 Plant Design Procedure and Baseline 42218.3 Clean Room Design 42318.3.1 Clean Room Evolution 42318.3.2 Floor Structure for Clean Room 42418.3.3 Clean Room Ceiling Height 42418.3.4 Air Flow and Circulation Design 42718.3.5 Cleanliness Control 42818.3.6 Air Flow Control Against Particle 42818.3.7 Chemical Contamination Countermeasures 43118.3.8 Energy Saving in FFU 43318.4 Supporting Systems with Environmental Consideration 43318.4.1 Incidental Facilities 43318.4.2 Water and Its Recycle 43418.4.3 Chemicals 43618.4.4 Gases 43618.4.5 Electricity 43718.5 Production Control System 437References 44019 Green Manufacturing 441YiLin Wei, Mona Yang, and Matt Chien19.1 Introduction 44119.2 Fabrication Plant (Fab) Design 44119.2.1 Fab Features 44119.2.2 Green Building Design 44219.3 Product Material Uses 44319.3.1 Material Types and Uses 44319.3.2 Hazardous Substance Management 44419.3.3 Material Hazard and Green Trend 44619.3.4 Conflict Minerals Control 44619.4 Manufacturing Features and Green Management 44719.4.1 The Manufacturing Processes 44719.4.2 Greenhouse Gas Inventory 44819.4.3 Energy Saving in Manufacturing 44919.4.4 Reduction of Greenhouse Gas from Manufacturing 44919.4.5 Air Pollution and Control 45119.4.6 Water Management and Emissions Control 45219.4.7 Waste Recycling and Reuse 45319.5 Future Challenges 453References 454Index 457
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