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    Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO

    Application to Displays

    AvShunpei Yamazaki,Tetsuo Tsutsui

    Inbunden, Engelska, 2017

    Del i serien Wiley Series in Display Technology

    1 322 kr

    Beställningsvara. Skickas inom 11-20 vardagar. Fri frakt över 249 kr.

    Beskrivning

    Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to DisplaysThis book highlights the display applications of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high-productivity manufacturing.The applications of CAAC-IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high-resolution and flexible organic light-emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC-IGZO enables LCDs with extremely low refresh rate that provides ultra-low power consumption in a wide range of use cases.Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2ƒ}V-s, and it is expected to potentially exceed 100 cm2ƒ}V-s as high as that of LTPS.A further two books in the series will describe the fundamentals of CAAC-IGZO, and the application to LSI devices.Key features: Introduces different oxide semiconductor field-effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel-integrated driving circuits.Reviews fundamentals and presents device architectures for high-performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology.Explains how oxide semiconductor thin-film transistors drastically can improve resolution and lower power consumption of LCDs.

    Produktinformation

    • Utgivningsdatum:2017-01-27
    • Mått:178 x 246 x 31 mm
    • Vikt:839 g
    • Format:Inbunden
    • Språk:Engelska
    • Serie:Wiley Series in Display Technology
    • Antal sidor:432
    • Förlag:John Wiley & Sons Inc
    • ISBN:9781119247456

    Utforska kategorier

    • Elektronik och kommunikationer inom Naturvetenskap och teknik

    Mer om författaren

    Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JAPAN Dr. Shunpei Yamazaki is an authority on semiconductors, memory devices, and liquid crystal displays. Listed on over 4,000 US utility patents, Dr. Yamazaki was named in the Guinness Book of World Records as holding the most patents in the world; hailed the most prolific inventor in history by USA Today (in 2005). His most notable work is on the thin-film transistor -- a significant discovery being a crystalline structure in Indium gallium zinc oxide (IGZO) material, which he discovered "by chance" in 2009. Today Dr. Yamazaki is President of the Semiconductor Energy Laboratory (SEL), where he and his team pioneered the unique development of ultra-low-power devices using CAAC-IGZO technology. A joint venture with the Sharp Corporation manufacturing smartphones using crystalline oxide semiconductors (IGZO) is a global first. In 2015 Dr.Yamazaki received the SID (Society for Information Display) Special Recognition Award for "discovering CAAC-IGZO semiconductors, leading its practical application, and paving the way to next-generation displays." His paper on CAAC-IGZO ranked in the top 15 most downloaded papers of Wiley Electrical Engineering and Communications Technology journals, 2014. Dr. Yamazaki is also an IEEE Life Fellow. Tetsuo Tsutsui, Kyushu University, Japan Tetsuo Tsutsui received his BS (1967) and MS (1969) in Applied Chemistry from Kyushu University, Japan, and Dr. of Engineering in Materials Science from Graduate School of Engineering Sciences of the same university in 1977. He was a professor at Graduate School of Engineering Sciences, Kyushu University from 1986 to 2008. His research interests were electronic and optical properties of molecular solids and organic semiconductor electronics, including organic light-emitting diodes, organic FETs, and organic photovoltaic devices. He has published more than 200 original and 50 review papers. He received The Polymer Society Award (Polymer Society, Japan, 1995), Chemical Society of Japan Award (2008), Medal with Purple Ribbon (Cabinet Office of the Japanese Government, 2009), and Jan Rajchman Prize (Society for Information Displays, 2011). He is a Fellow of Japan Society of Applied Physics and a Professor Emeritus, Kyushu University.

    Innehållsförteckning

    • About the Editors ixList of Contributors xiSeries Editor’s Foreword xiiiPreface xvAcknowledgments xviii1 Introduction 11.1 History of Displays 31.2 Requirement for Displays 41.3 Transistor Technology for Displays 51.3.1 Comparison of Silicon and Oxide Semiconductors 61.3.2 FETs in LCDs 81.3.3 FETs in OLED Displays 111.3.4 Recent FET Technologies 141.3.5 Development of OLED Displays 17References 192 Applications of CAAC-IGZO FETs to Displays 212.1 Introduction 212.2 Bottom-Gate Top-Contact FET 242.2.1 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure 272.2.2 GI Formation 272.2.3 Formation of Buried Channel by Stacked Active Layer 332.2.4 Baking Treatment of CAAC-IGZO 422.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes 452.2.6 Cleaning of the Back Channel 472.2.7 Copper Wiring for S/D Electrodes 522.3 Top-Gate Self-Aligned FET 622.3.1 Fabrication Process of TGSA CAAC-IGZO FETs 642.3.2 Formation of GE/GI Patterns 652.3.3 Formation of S/D Regions 662.3.4 GI Thinning and L Reduction 702.4 Characteristics of CAAC-IGZO FET 712.4.1 Current Drivability 712.4.2 Low Off-State Current 942.4.3 Normally-Off Id–Vg Characteristics and Small Threshold-Voltage Variation 982.4.4 Saturability of Id–Vd Characteristics 1032.4.5 Summary 1092.5 Density of States and Device Reliability 1092.5.1 Introduction 1102.5.2 Measurement of Defect States in IGZO Film 1112.5.3 Correlation between Oxygen Vacancies and FET Characteristics 1152.5.4 Defect States in Silicon-Oxide Film 1172.5.5 NBITS Mechanism 1222.5.6 Summary 1222.6 Oxide Conductor Electrode Process 1242.6.1 Introduction 1242.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity 1242.6.3 LCD Device with Oxide Conductor Electrode 1312.6.4 Summary 134References 1353 Driver Circuit 1383.1 Introduction 1383.2 Gate-Driver Circuit 1393.2.1 Logic Circuit and Bootstrapping 1393.2.2 Flip-Flops 1413.2.3 Reduction in Area of Gate-Driver Circuit 1493.3 Source-Driver Circuit 1543.3.1 Introduction 1543.3.2 Demultiplexer 1573.3.3 8-Bit Source-Driver IC for 13.3-Inch, 60-Hz, 8-Bit 8 K OLED Panels 1613.3.4 12-Bit Source-Driver IC for 13.3-Inch, 120-Hz, 12-Bit 8 K OLED Panels 1723.3.5 Full-Driver IC 179References 1814 Application to OLED Displays 1834.1 Introduction 1834.2 Device Architecture for High-Performance OLED 1854.2.1 Fundamentals of OLEDs 1854.2.2 Organic Material/Metal Oxide Composite 2014.2.3 Exciplex–Triplet Energy Transfer for High-Performance Phosphorescent OLEDs 2214.2.4 Enhancement in the Emission Efficiency of Fluorescent OLEDs 2404.2.5 Increase in Outcoupling Efficiency of OLEDs by Molecular Orientation 2534.3 OLED Structure for Higher Pixel Density 2614.3.1 Tandem OLED 2624.3.2 WTC Structure 2694.3.3 Measures for Crosstalk 2724.4 Circuit Design for OLED Displays 2744.4.1 Driving OLED Displays 2744.4.2 External Compensation 2804.4.3 Internal Compensation 2824.4.4 Arrangement of Pixel Circuit and High Resolution 2914.5 Characteristics of OLED Displays 2934.5.1 Application of WTC Structure to Displays 2934.5.2 Performance of OLED and LCDs 295References 3005 Flexible Displays 3065.1 Introduction 3065.1.1 OLED and Flexible Displays 3065.2 Flexible Display Fabrication Technology 3095.2.1 Separation Layer 3095.2.2 Separation Process 3095.2.3 Transfer Process of Flexible Displays 3165.2.4 Moisture-Blocking Property of the Flexible OLED Display 3205.2.5 Bending Test 3265.2.6 System Automation by Transfer Technology Apparatus (TT Apparatus) 3285.3 Prototypes of Flexible OLED Displays 338References 3476 Application to Liquid Crystal Displays 3496.1 Introduction 3496.2 Technology for Higher Resolution 3516.2.1 Introduction 3516.2.2 The Pixel Circuit 3516.2.3 Pixel Layout and Aperture Ratio of an LCD 3536.2.4 Applicability of Large-Sized Displays 3556.3 Driving Method for Power Saving 3586.3.1 Introduction 3586.3.2 Saving Power with Low-Frequency Driving 3586.3.3 Low-Frequency Driving with CAAC-IGZO 3606.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving 3676.3.5 Conclusions 3766.4 Characteristics of LCDs 3766.4.1 Introduction 3766.4.2 High-Resolution Fringe-Field Switching LCDs 3766.4.3 A 434-PPI Reflective LCD 388References 395Appendix 398Index 400