Dilute Nitride Semiconductors

AvMohamed Henini

Inbunden, Engelska, 2004

2 437 kr

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Beskrivning

This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas.
Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 �m and 1.55 �m are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.

In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics

Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field
Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas
Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Produktinformation

Utgivningsdatum:2004-12-15
Mått:165 x 240 x 0 mm
Vikt:1 300 g
Format:Inbunden
Språk:Engelska
Antal sidor:640
Förlag:Elsevier Science
ISBN:9780080445021

Utforska kategorier

Elektronik och kommunikationer inom Naturvetenskap och teknik

Mer om författaren

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Innehållsförteckning

PrefaceChapter 1: MBE Growth and Characterization of Long Wavelength Dilute Nitride Nitride III–V AlloysChapter 2: Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase EpitaxyChapter 3: The Chemical Beam Epitaxy of Dilute Nitride Alloy SemiconductorsChapter 4: MOMBE Growth and Characterization of Nitride III–V-N Compounds and Application to InAs Quantum DotsChapter 5: Recent Progress in Dilute Nitride Quantum DotsChapter 6: Physics of Isoelectronic Dopants in GaAsChapter 7: Measurement of Carrier Localization Degree, Electron Effective Mass, and Excition Size in InxGa1−xAs1−yNy AlloysChapter 8: Probing the “Unusual Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other TechniquesChapter 9: Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional StructuresChapter 10: Band Anticrossing and Related Electronic Structure in III-N-V AlloysChapter 11: A Tight-Binding Based Analysis of the Band Anti-Crossing Model and Its Application in Ga(In)NAs AlloysChapter 12: Electronic Structure Evolution of Dilute III–V Nitride AlloysChapter 13: Theory of Nitrogen-Hydrogen Complexes in N-Containing III–V AlloysChapter 14: Dislocation-free III–V-N Alloy Layers on Si Substrates and Their Device ApplicationsChapter 15: GaNAsSb Alloy and its Potential for Device ApplicationsChapter 16: A Comparative Look at 1.3 μm InGaAsN-based VCSELs for Fiber-optical Communication SystemsChapter 17: Long-wavelength Dilute Nitride—Antimonide LasersChapter 18: Application of Dilute Nitride Materials to Heterojunction Bipolar TransistorsIndex