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      Molecular Beam Epitaxy

      From Research to Mass Production

      AvMohamed Henini

      Inbunden, Engelska, 2012

      2 003 kr

      Beställningsvara. Skickas inom 10-15 vardagar. Fri frakt över 249 kr.

      Beskrivning

      This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

      MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.

      • Condenses fundamental science of MBE into a modern reference, speeding up literature review
      • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
      • Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

      Produktinformation

      • Utgivningsdatum:2012-12-31
      • Mått:216 x 276 x 33 mm
      • Vikt:1 920 g
      • Format:Inbunden
      • Språk:Engelska
      • Antal sidor:744
      • Förlag:Elsevier Science
      • ISBN:9780123878397

      Utforska kategorier

      • Elektronik och kommunikationer inom Naturvetenskap och teknik

      Mer om författaren

      Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

      Recensioner i media

      "Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini…brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications." --Reference and Research Book News, December 2013

      Innehållsförteckning

      • 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy4. Droplet Epitaxy of Nanostructures5. Self-assembled Quantum Dots6. Migration Enhanced Epitaxy of Low Dimensional Structures7. Surfactant-modified Epitaxy8. MBE Growth of High Mobility 2DEG9. MBE of GaAsBi10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys11. MBE of Dilute Nitride Optoelectronic Devices12. The Effects of Antimony During MBE Growth13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications14. In-rich InGaN15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors17. MBE of Semiconducting Oxides18. ZnO Materials and Devices grown by MBE19. MBE of Complex Oxides20. Epitaxial Systems Combining Oxides and Semiconductors21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials24. MBE of Semimagnetic Quantum Dots25. MBE Growth of Graphene26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth29. MBE of II-VI Lasers30. MBE Growth of Terahertz Quantum Cascade Lasers31. MBE as a Mass Production Technique32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs33. Mass Production of Sensors Grown by MBE
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