Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume.- Covers the concept of crystal growth, providing an understanding of each growth method- Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control- Reviews fundamental characterization concepts to discern the quality of ingots and wafers- Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume.- Covers the concept of crystal growth, providing an understanding of each growth method- Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control- Reviews fundamental characterization concepts to discern the quality of ingots and wafers- Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress