MA Yue has got engineer’s and master’s degrees in electrical and computer engineering from the Ecole Centrale de Pékin and Beihang university, respectively His PhD, obtained at the Institute des Nanotechnologies de Lyon (INL) in the university of Lyon, INSA, France, concerns the field of micro-electronics: First and second order electro-thermal parameters for3D circuits .His scientific interests include mathematics modeling, integrated circuits and systems, and computer-aided IC design, with theatrical and practical issues in numerical simulation methods, applied especially to 3D ICs. He..  Christian GONTRAND was born in Montpellier, France, on February 21, 1955.He received the M.S, Ph.D and "State Doctorat" (Habilitation Diploma) degree, respectively in 1977, 1982 and 1987, in electronics, from the Université des Sciences et Techniques du Languedoc, Montpellier , France.From 1982 to 1984, He has been working with the Thomson "Laboratoire Central de Recherche"(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).From 1988, he joined the laboratoire de Physique de la Matière (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge　of the new "Centre de Microélectronique de la Région Lyonnaise" (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan,France.From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team "Smart System Integration", at the "Centre de Génie Electrique de Lyon" (CEGELY/AMPERE). From 2002, he was at the Head of the axis "Radiofrequency Devices, Circuits and Systems" of DE team of the Lyon Institute of Nanotechnology, dealing with noises or parasitic disturbances in mixed complex 2D and 3D RF circuits and systems.

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• General Information, Substrate Noise in Mixed-Signal Ic’s in a Silicon Process, Efficient and Simple Compact Modeling of Interconnects, Electro-Thermal Modeling of Substrate, Substrate noise and parasites: towards 3D, General Conclusion, References, Index

MA Yue has got engineer’s and master’s degrees in electrical and computer engineering from the Ecole Centrale de Pékin and Beihang university, respectively His PhD, obtained at the Institute des Nanotechnologies de Lyon (INL) in the university of Lyon, INSA, France, concerns the field of micro-electronics: First and second order electro-thermal parameters for3D circuits .His scientific interests include mathematics modeling, integrated circuits and systems, and computer-aided IC design, with theatrical and practical issues in numerical simulation methods, applied especially to 3D ICs. He..  Christian GONTRAND was born in Montpellier, France, on February 21, 1955.He received the M.S, Ph.D and "State Doctorat" (Habilitation Diploma) degree, respectively in 1977, 1982 and 1987, in electronics, from the Université des Sciences et Techniques du Languedoc, Montpellier , France.From 1982 to 1984, He has been working with the Thomson "Laboratoire Central de Recherche"(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).From 1988, he joined the laboratoire de Physique de la Matière (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge　of the new "Centre de Microélectronique de la Région Lyonnaise" (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan,France.From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team "Smart System Integration", at the "Centre de Génie Electrique de Lyon" (CEGELY/AMPERE). From 2002, he was at the Head of the axis "Radiofrequency Devices, Circuits and Systems" of DE team of the Lyon Institute of Nanotechnology, dealing with noises or parasitic disturbances in mixed complex 2D and 3D RF circuits and systems.

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• General Information, Substrate Noise in Mixed-Signal Ic’s in a Silicon Process, Efficient and Simple Compact Modeling of Interconnects, Electro-Thermal Modeling of Substrate, Substrate noise and parasites: towards 3D, General Conclusion, References, Index

MA Yue has got engineer’s and master’s degrees in electrical and computer engineering from the Ecole Centrale de Pékin and Beihang university, respectively His PhD, obtained at the Institute des Nanotechnologies de Lyon (INL) in the university of Lyon, INSA, France, concerns the field of micro-electronics: First and second order electro-thermal parameters for3D circuits .His scientific interests include mathematics modeling, integrated circuits and systems, and computer-aided IC design, with theatrical and practical issues in numerical simulation methods, applied especially to 3D ICs. He..  Christian GONTRAND was born in Montpellier, France, on February 21, 1955.He received the M.S, Ph.D and "State Doctorat" (Habilitation Diploma) degree, respectively in 1977, 1982 and 1987, in electronics, from the Université des Sciences et Techniques du Languedoc, Montpellier , France.From 1982 to 1984, He has been working with the Thomson "Laboratoire Central de Recherche"(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).From 1988, he joined the laboratoire de Physique de la Matière (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge　of the new "Centre de Microélectronique de la Région Lyonnaise" (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan,France.From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team "Smart System Integration", at the "Centre de Génie Electrique de Lyon" (CEGELY/AMPERE). From 2002, he was at the Head of the axis "Radiofrequency Devices, Circuits and Systems" of DE team of the Lyon Institute of Nanotechnology, dealing with noises or parasitic disturbances in mixed complex 2D and 3D RF circuits and systems.

Select Guide Rating

• General Information, Substrate Noise in Mixed-Signal Ic’s in a Silicon Process, Efficient and Simple Compact Modeling of Interconnects, Electro-Thermal Modeling of Substrate, Substrate noise and parasites: towards 3D, General Conclusion, References, Index