Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.

• Chapter 1 Introduction to Multi-Dimensional Field Effect Transistors (MuDFETs) Mamataj Khatuna and Ekramul KabirChapter 2 Introduction to Multi-Dimensional Field Effect Transistors (FETs)Piyali SahaChapter 3 2D Material-Based Field Effect Transistors (FETs)Piyali Saha, Soumya Sen, Prabhat Singh, and Ashish RamanChapter 4 Emerging Transition Metal Dichalcogenides (TMDCs) in Semiconductor Design: A Path to Next-Generation ElectronicsMalvika, Ashutosh Srivastava, Jagritee Talukdar, Rajan Singh, Prabhat Singh, and Jami Venkata SumanChapter 5 From Classical to Quantum: Ballistic Transport in Nanosheet FETsE. Rajalakshmi, N. B.Balamurugan, M. Hemalatha and M. Suguna Chapter 6 Classical to Semiclassical Transport in Field Effect TransistorsSharmistha Shee Kanrar, Shib Sankar Das, and Subir Kumar SarkarChapter 7 Scaling Capability Analysis of Junctionless Multi-Gate FETsR. Ouchen, T. Berghout, F. Djeffal, and H. FerhatiChapter 8 Nanosheet Transistors: A New Dimension in Charge Transport Parul DeviChapter 9 Advanced Electrostatics in Nanosheet Transistors for Enhanced Device ScalingVratika Verma, Teena Saini, Sakshi Saini, and Jagram MeenaChapter 10 The Charge Transport of the Breast Cancer Cells on Metal Strip-Loaded Extended Source-TFET BiosensorMadhulika Verma and Sachin AgrawalChapter 11 Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors: Bridging Advances in Biosensing Technology Basudha Dewan and Kamal Kishor ChoureChapter 12 Field Effect Transistors in Gas Sensing: Advances in Detection and Analysis of Diverse GasesAnkit Kumar Singh, Sanjeev Rai, and Nirmal RoyChapter 13 High-Performance Silicon Nitride Waveguides: A Platform for Nonlinear and Quantum PhotonicsChandani Dubey, Prabhat Singh, Priya Kaushal, Dilip Singh, Malvika, and Ashutosh Srivastava

Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.

• Chapter 1 Introduction to Multi-Dimensional Field Effect Transistors (MuDFETs) Mamataj Khatuna and Ekramul KabirChapter 2 Introduction to Multi-Dimensional Field Effect Transistors (FETs)Piyali SahaChapter 3 2D Material-Based Field Effect Transistors (FETs)Piyali Saha, Soumya Sen, Prabhat Singh, and Ashish RamanChapter 4 Emerging Transition Metal Dichalcogenides (TMDCs) in Semiconductor Design: A Path to Next-Generation ElectronicsMalvika, Ashutosh Srivastava, Jagritee Talukdar, Rajan Singh, Prabhat Singh, and Jami Venkata SumanChapter 5 From Classical to Quantum: Ballistic Transport in Nanosheet FETsE. Rajalakshmi, N. B.Balamurugan, M. Hemalatha and M. Suguna Chapter 6 Classical to Semiclassical Transport in Field Effect TransistorsSharmistha Shee Kanrar, Shib Sankar Das, and Subir Kumar SarkarChapter 7 Scaling Capability Analysis of Junctionless Multi-Gate FETsR. Ouchen, T. Berghout, F. Djeffal, and H. FerhatiChapter 8 Nanosheet Transistors: A New Dimension in Charge Transport Parul DeviChapter 9 Advanced Electrostatics in Nanosheet Transistors for Enhanced Device ScalingVratika Verma, Teena Saini, Sakshi Saini, and Jagram MeenaChapter 10 The Charge Transport of the Breast Cancer Cells on Metal Strip-Loaded Extended Source-TFET BiosensorMadhulika Verma and Sachin AgrawalChapter 11 Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors: Bridging Advances in Biosensing Technology Basudha Dewan and Kamal Kishor ChoureChapter 12 Field Effect Transistors in Gas Sensing: Advances in Detection and Analysis of Diverse GasesAnkit Kumar Singh, Sanjeev Rai, and Nirmal RoyChapter 13 High-Performance Silicon Nitride Waveguides: A Platform for Nonlinear and Quantum PhotonicsChandani Dubey, Prabhat Singh, Priya Kaushal, Dilip Singh, Malvika, and Ashutosh Srivastava

Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.

• Chapter 1 Introduction to Multi-Dimensional Field Effect Transistors (MuDFETs) Mamataj Khatuna and Ekramul KabirChapter 2 Introduction to Multi-Dimensional Field Effect Transistors (FETs)Piyali SahaChapter 3 2D Material-Based Field Effect Transistors (FETs)Piyali Saha, Soumya Sen, Prabhat Singh, and Ashish RamanChapter 4 Emerging Transition Metal Dichalcogenides (TMDCs) in Semiconductor Design: A Path to Next-Generation ElectronicsMalvika, Ashutosh Srivastava, Jagritee Talukdar, Rajan Singh, Prabhat Singh, and Jami Venkata SumanChapter 5 From Classical to Quantum: Ballistic Transport in Nanosheet FETsE. Rajalakshmi, N. B.Balamurugan, M. Hemalatha and M. Suguna Chapter 6 Classical to Semiclassical Transport in Field Effect TransistorsSharmistha Shee Kanrar, Shib Sankar Das, and Subir Kumar SarkarChapter 7 Scaling Capability Analysis of Junctionless Multi-Gate FETsR. Ouchen, T. Berghout, F. Djeffal, and H. FerhatiChapter 8 Nanosheet Transistors: A New Dimension in Charge Transport Parul DeviChapter 9 Advanced Electrostatics in Nanosheet Transistors for Enhanced Device ScalingVratika Verma, Teena Saini, Sakshi Saini, and Jagram MeenaChapter 10 The Charge Transport of the Breast Cancer Cells on Metal Strip-Loaded Extended Source-TFET BiosensorMadhulika Verma and Sachin AgrawalChapter 11 Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors: Bridging Advances in Biosensing Technology Basudha Dewan and Kamal Kishor ChoureChapter 12 Field Effect Transistors in Gas Sensing: Advances in Detection and Analysis of Diverse GasesAnkit Kumar Singh, Sanjeev Rai, and Nirmal RoyChapter 13 High-Performance Silicon Nitride Waveguides: A Platform for Nonlinear and Quantum PhotonicsChandani Dubey, Prabhat Singh, Priya Kaushal, Dilip Singh, Malvika, and Ashutosh Srivastava