Micro and Nano Semiconductor Devices for Digital, Analog and Sensor Design

Suman Lata Tripathi, PhD is a Professor at Lovely Professional University with more than 22 years of experience in academics and research. She has published more than 125 research papers in refereed science journals, conference proceedings, and e-books, edited and authored more than 27 books, 14 Indian patents, and four copyrights. Her areas of expertise include microelectronics device modeling and characterization, low-power VLSI circuit design, advanced FET design for IoT, and embedded system design. Vrinda Gupta, PhD is an Associate Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Kurukshetra. She has more than 75 publications in international journals, national and international conferences, and book chapters. Her research interests are in the fields of computer communications, network and information security, wireless communications and networking, embedded systems design, and Internet of Things. Sobhit Saxena, PhD is a Professor in the School of Electronics and Electrical Engineering at Lovely Professional University with more than 14 years of teaching experience. He has published more than 35 research papers in international journals and conferences, two book chapters, and two books, as well as filed three patents. His areas of expertise include nanomaterial synthesis and characterization, and electrochemical analysis. Shipra Upadhyay, PhD is an Assistant Professor at the Ramaiah Institute of Technology. She has published many papers in peer-reviewed international journals, conferences, and books. Her research interests include, custom analog IC design, field programmable gate array programming, nanoelectronics, and low-power circuit design. Sudip Ghosh, PhD is an Assistant Professor in the School of VLSI Technology at the Indian Institute of Engineering Science and Technology. He has more than 60 publications in international journals and conferences. His areas of interest include digital image and video watermarking systems design, logic synthesis and verification of digital circuits, VLSI physical design, and VLSI testing.

• Preface xv1 Design of Advanced MOSFET Architectures 1Remya Jayachandran and Salila Hegde1.1 Introduction 21.2 History of Transistors 31.2.1 Evolution of Transistors 31.2.2 Non-Planar Device Architectures 51.3 SOI MOSFET: From Single Gate to Multigate 61.4 Current Non-Planar Device Architectures 91.4.1 FinFET 91.4.1.1 FinFET Advantages 101.4.1.2 FinFET Disadvantages 111.4.1.3 FinFET in Semiconductor Industries 121.4.1.4 Future of FinFET 121.4.2 Gaafet 131.4.2.1 GAAFET Advantages 141.4.2.2 Working of GAAFET 141.4.2.3 Advancement in GAA Device Design 151.4.2.4 Future of GAAFET 171.4.3 Reconfigurable FET (RFET) 171.4.3.1 Future of RFET 191.4.4 Tunnel FET 191.4.4.1 TFET Advantages 191.4.4.2 Future of TFET 201.5 Applications of Non-Planar Transistors in Analog and Digital Circuits 201.5.1 Applications in Digital Circuits 211.5.2 Applications in Analog Circuits 211.5.3 Design Considerations 211.5.4 Challenges and Future Trends 221.6 Conclusion 23References 272 Multi Gate MOSFET Architectures 31Vrinda Gupta, L.G. Naveen Kumar and K.N.S. Santosh2.1 Introduction 322.2 About Multi-Gate MOSFETs 352.3 Types of Multi-Gate MOSFETs 362.3.1 Double-Gate MOSFETs 362.3.1.1 Structure of DG MOSFET 372.3.1.2 Applications of DG MOSFETs 382.3.1.3 Design Challenges of DG MOSFETs 392.3.2 Tri-Gate MOSFETs 392.3.2.1 Structure of Tri-Gate MOSFET 402.3.2.2 Applications of Tri-Gate MOSFETs 412.3.2.3 Design Challenges of Tri-Gate MOSFETs 412.3.3 Gate-All-Around (GAA) MOSFETs 422.3.3.1 Structure of Gate-All-Around (GAA) Mosfet 422.3.3.2 Applications of Gate-All-Around (GAA) Mosfet 432.3.3.3 Design Challenges of Gate-All-Around (gaa) Mosfet 442.3.4 Omega-Gate MOSFET 452.3.4.1 Structure of Omega-Gate MOSFET 452.3.4.2 Applications of Omega-Gate MOSFET 462.3.4.3 Design Challenges of Omega-Gate MOSFET 462.4 Advantages of Multi-Gate MOSFETs 472.5 Conclusion 48References 493 Design and Comparative Analysis of Hybrid DG-MOSFET with Conventional CMOS Using Visual TCAD 51Kushagra, Suman Lata Tripathi and Balwinder Raj3.1 Introduction 523.2 Design Methodology 533.3 Device Architecture and Materials Description 543.4 Results and Discussion 543.4.1 N-Channel DG-MOSFET 543.4.2 P-Channel DG-MOSFET 583.5 CMOS Compatibility of Proposed n- & p- Channel Dg-mosfet 613.6 Hybrid DG-MOSFET 633.6.1 Device Simulation on TCAD 633.6.2 Hybrid DG-MOSFET Response 633.6.3 Electric Field & Potential Plot 673.7 Applications & Future Scope 673.8 Conclusion 68Acknowledgement 68References 694 Nano Devices for Comparator Designs 73Niranjana C., Vineeth Kumar P. K., Jijesh J. J. and Lakshmi Manasa B.4.1 Introduction 734.2 Experimental Methods and Materials 744.2.1 Carbon Nano Tubes 744.2.2 Potentials of Carbon Nanotubes (CNTs) 744.2.3 Design Considerations of CNTs 754.2.4 Experimental Demonstrations for CNTs 764.3 Graphene 774.3.1 Potentials of Graphene 774.3.2 Design Considerations of Graphene 784.3.3 Experimental Demonstrations for Graphene 784.4 Tunnel Field Effect Transistor 794.4.1 Potential of Tunnel Field Effect Transistor 804.4.2 Design Considerations of TFET 804.4.3 Experimental Demonstrations for TFET 804.5 Results and Discussion 814.5.1 Performance Parameters of Comparator Circuits 814.6 Conclusion 88References 895 Nano Device for SRAM Memory Arrays 91Akey Sungheetha, Rajesh Sharma R. and Sheila Mahapatra5.1 Introduction 915.2 Study 935.3 Methodology 955.3.1 Device Simulation and Modeling 955.3.2 Fabrication Techniques 965.3.3 SRAM Cell Design and Integration 975.3.4 Performance Evaluation 975.3.5 Variability and Reliability Analysis 985.4 Result and Discussion 995.4.1 Performance Comparison 995.4.2 Variability and Reliability 1025.4.3 Scalability and Future Prospects 1055.4.4 Integration Challenges 1055.4.5 Economic Considerations 1065.5 Conclusion 106Bibliography 1066 Technology Computer-Aided Design (TCAD) for Simulation of Advanced Transistor Design 109P. Sivakumar, Shashi Kant Dargar and P. Harikrishnan6.1 Introduction 1106.2 Essentials of Device Simulation 1116.2.1 TCAD: Key Features and Capabilities 1116.3 Design and Simulation of MOSFET: STEP-BY-STEP 1126.3.1 Material Selection 1126.3.2 Structure Definition 1136.4 Advanced MOSFET Structure Design 1146.4.1 Simulation of GaN HEMT with Example and Case Studies 1166.5 Conclusion and Future Scope 122Acknowledgements 122References 1227 FETs for Biomedical Applications: Recent Developments and Prospects for the Future 125Anbuselvi D., S. GraceInfantiya and D. Bharath7.1 Introduction 1267.1.1 Bio-FET and Solid-Liquid Interface 1277.2 Applications of FET 1287.2.1 Ion-Sensitive FETs (ISFETs) 1287.2.2 Influenza 1297.2.3 Cancer 1307.2.4 Tear Sensors 1327.2.5 Cardiovascular Disease (CVDs)/Acute Myocardial Infarction (AMI) 1327.2.6 Diabetes 1337.3 Prospects and Difficulties for Bio-FET 1337.4 Conclusion 134References 1348 Efferent Circuit Design and Energy Consumption of Grayto-Binary (G2B) and Binary-to-Gray (B2G) Code Conversion Using QCA Nanoelectronic Technologies 143Mukesh Patidar, Ankit Jain, Shreyaskumar Patel, Keshav Patidar and Hemanshi Chugh8.1 Introduction 1448.2 Literature Work 1458.3 Synchronization Clocking Operation for Proposed Design 1488.4 Proposed Design for Nanoelectronic Circuits 1488.5 Result Analysis and Comparison 1508.6 Conclusion 156References 1569 Asymmetrical Double Gate Junction Less FET 159Lijin Wilson and Suman Lata Tripathi9.1 Introduction 1609.2 Simulated Device Dimensions and Material 1619.3 Simulated Device Architecture Description 1639.4 Result and Simulations 1679.5 Subthreshold Performance 1739.6 Comparison with Another Technology Node 1749.7 Applications of Asymmetric Gate DG MOSFET 1769.8 Conclusion 176References 17710 Smart Materials for Semiconductor Devices: Research, Characteristics and Applications 179Krishan Arora10.1 Introduction 17910.2 Shrewd Materials 18010.3 Types of Smart or Keen Materials 18110.3.1 Shape Memory Combination 18110.3.1.1 Thermoelectricity 18310.3.1.2 Pseudoelasticity 18310.3.1.3 Damping Capacity 18410.3.2 Piezoelectric Materials 18410.3.3 Magnetostrictive Materials 18410.3.4 Chromic Materials 18510.3.4.1 Photochromic 18510.3.4.2 Thermochromic 18610.3.4.3 Piezochromic 18610.3.5 pH Delicate Materials 18610.3.6 Magnetorheological and Electrorheological Fluids 18710.4 Application of Savvy Materials 18710.4.1 Walking Piezo Lever 18710.4.2 Aviation Innovation 18810.4.3 Atomic Businesses Keen Substances 18810.5 Shrewdly Material 18810.6 Conclusions 189References 19011 Nanotechnology for Energy Applications: Harnessing Nano and Artificial Intelligence for Sustainable Energy 195Harpreet Kaur Channi, Ramandeep Sandhu, Deepika Ghai and Nimisha Singh11.1 Introduction 19611.1.1 Overview of Nanotechnology 19711.1.2 Applications of Nanotechnology 19811.1.3 Role of Artificial Intelligence in Energy Applications 19811.1.4 Importance of Sustainable Hybrid Energy Solutions 20011.2 Need of the Work 20111.2.1 Nanotechnology in Energy Generation 20111.2.2 Nanotechnology in Energy Storage 20211.2.3 AI Optimization in Hybrid Energy Systems 20311.3 Hybrid Renewable System: Case Study of Rural Region 20411.3.1 Objectives of the Chapter 20411.4 Methodology 20411.4.1 Location Details 20611.4.2 System Designing and Modeling 20911.4.3 Main Outcomes of Hybrid Solar-Wind-Battery System 21211.5 Results and Discussion 21811.5.1 Energy Efficiency and Sustainability 21911.5.2 Challenges and Future Directions 22011.5.3 Regulatory and Ethical Considerations 22111.6 Conclusion 221References 22212 Implementation and Analysis of Various Full Adder Configuration Using Cadence Virtuoso 229Spoorthi S.P., Bharathi S.H., Shipra Upadhyay and Chaithanya D.J.12.1 Introduction 23012.2 Adders 23012.2.1 Half Adder 23012.2.2 Full-Adder 23112.2.3 Ripple Carry Adder 23212.2.4 Carry Look-Ahead Adder 23212.2.5 Carry-Save Adder 23312.2.6 Parallel Prefix Adders 23312.2.7 Serial Adder 23412.3 CMOS Implementation of Adders 23412.3.1 28T Full Adder 23412.3.2 14T Full Adder 23512.3.3 20T Full Adder 23612.3.4 10T Full-Adder 23712.3.5 8T Full-Adder 23712.4 Implementation of Full-Adder 28T and 14T 23812.4.1 Simulation Results 23812.5 Conclusion 241Bibliography 24213 Process Corner Analysis of 4-Bit Look Up Table (LUT) Using 90nm CMOS Technology 243Talla. Narayana Swami, Shiridi Sravanthi, Suman Lata Tripathi and Yuli Sun Hariyani13.1 Introduction 24413.2 Look-Up Table (LUT) 24413.3 Basic Blocks Used in Design of LUT at 90nm CMOS 24613.3.1 2X1 Multiplexer 24913.3.2 D-Flip Flop (DFF) 24913.3.3 Schematic of 4 Bit-LUT 25013.3.3.1 Functions Implementation Using 4-Bit Lut 25113.4 Corner Analysis 25213.5 Applications 25513.5.1 Implementation of Digital Logic Functions 25513.5.2 DSP Processors 25613.5.3 Signal and Image Processing 25613.6 Conclusion 256References 25714 Designing and Small Signal Analysis of Common Source Amplifier Using GaN Based HEMT 261Yogesh Kumar Verma14.1 Introduction 26114.2 Device Structure 26314.3 Results and Discussions 26514.4 Conclusion 269References 26915 The 5 th Generation: Major Implementation, Challenges and Massive MIMO Technology 273Rashmi Roges, Sandeep Sharma and Praveen Kumar Malik15.1 Introduction 27315.2 Major Challenges Faced in 5G Implementation 27615.2.1 Infrastructure 27615.2.2 Cost 27615.2.3 Testing of 5G 27615.2.4 5G Backhaul 27815.2.5 Security Concerns 27915.3 Classification of 5G Services 28015.4 Massive MIMO for 5G 28115.5 Conclusion 286References 28616 Smart Nanomaterials: Revolutionizing Drug Delivery Strategies 289Jujhaar Singh Aidhen, Arjun Vitthal Chambarge, Chavan Aniket Navnath, Atharv Mohan Patil, Vedant Dnyandev Arjun, Jupinder Kaur and Rajan Vohra16.1 Introduction 29016.2 Disease Specific Drug Delivery 29216.3 Synthesis of Nanomaterials for Drug Delivery 30516.4 Location Specific Drug Delivery 31016.5 Future Scope 32016.6 Conclusion 320References 321About the Editors 325Index 327