High-Efficiency RF Power Amplifiers and Oscillators

Innovative Engineering Design Approaches

Inbunden, Engelska, 2026

1 530 kr

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Beskrivning

Explore creative RF design through innovative engineering and practical examples High-Efficiency RF Power Amplifiers and Oscillators: Innovative Engineering Design Approaches offers original and up-to-date guidance for designing high-efficiency RF and microwave circuits. Written by Andrei Grebennikov, a consultant with extensive RF circuit design experience, this guide emphasizes novel theoretical approaches and practical examples while minimizing mathematical complexity for readers of varying technical ability. The book covers active device modeling including MOSFETs, GaN HEMTs, and HBTs, progressing through impedance matching techniques. It explores Class-F, inverse Class-F, and Class-E amplifier designs with detailed load networks and implementation examples. Coverage extends to high-efficiency oscillators, advanced Doherty architectures for base stations and MIMO applications, and mixed-mode enhancement techniques including envelope tracking for cellular systems. Readers will also find: Comprehensive active device modeling for MOSFETs, LDMOSFETs, GaN HEMTs, and HBTs with practical equivalent circuits and characterization methodsDetailed impedance matching using lumped elements and transmission lines, including broadband techniques and lossy match design approachesComplete treatment of Class-F, inverse Class-F, and Class-E designs with optimum load network parameters and transmission-line implementationsAdvanced Doherty amplifier architectures including asymmetric, multistage, and inverted configurations with integration techniques for MIMO applicationsPractical design examples including MMIC HBT power amplifiers, GaN HEMT implementations, and oscillators for wireless power transferEssential for graduates, researchers, circuit designers, and engineers in RF and microwave engineering, High-Efficiency RF Power Amplifiers and Oscillators provides the practical tools and theoretical foundation needed to develop cutting-edge wireless communication circuits through creative design approaches that balance innovation with proven engineering principles.

Produktinformation

Utgivningsdatum:2026-12-21
Format:Inbunden
Språk:Engelska
Antal sidor:304
Förlag:John Wiley & Sons Inc
ISBN:9781394374380

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Mer om författaren

Andrei Grebennikov, PhD, received his Dipl. Eng. degree in radio electronics from the Moscow Institute of Physics and Technology and his Ph.D. in radio engineering from Moscow Technical University of Communications and Informatics. He is an author and coauthor of more than 100 papers, holds 30 European and US patents, and has written 10 books dedicated to RF and microwave circuit design. He has lectured as a Guest Professor at the University of Linz.

Innehållsförteckning

PrefaceAcknowledgmentAbout the Author1. Active devices and modeling1.1. MOSFET device modeling1.2. LDMOSFETs1.2.1. Small-signal equivalent circuit1.2.2. Nonlinear I-V models1.2.3. Nonlinear C-V models1.2.4. Charge conservation1.2.5. Gate-source resistance1.2.6. Temperature dependence1.3. Equivalent circuits characterizing device input and output impedances1.4. GaAs MESFETs and GaN HEMTs1.5. BJTs and HBTs1.5.1. Nonlinear BJT and HBT models1.5.2. Determination of equivalent circuit elements1.5.3. Nonlinear bipolar device modeling1.5.4. Large-signal collector capacitanceReferences 2. Impedance matching2.1. Conjugate matching condition2.2. Matching with lumped elements2.2.1. Analytic design technique2.2.2. Low-pass and high-pass L-type transformers2.2.3. П- and T-type transformers2.2.4. Equal-Q broadband matching2.3. Matching with transmission lines2.3.1. Transmission-line transformer2.3.2. λ/4 and λ/8 impedance transformers2.3.3. Low-pass L- and П-transformers with series transmission line2.3.4. Matching networks with lumped and distributed elements2.3.5. Equal-Q broadband matching2.3.6. Broadband matching with stepped transmission lines2.4. Lossy match design technique2.5. Broadband matching with prescribed amplitude-frequency responseReferences 3. Power amplifier design fundamentals3.1. Power gain and maximum operating frequency3.2. Power gain and stability3.2.1. Immittance approach and stability factor3.2.2. Frequency domains of BJT potential instability3.2.3. Frequency domains of MOSFET potential instability3.2.4. Parametric oscillations3.2.5. Examples of stabilization circuits3.3. Classes of operation3.3.1. Conduction angle3.3.2. Basic classes of operation: A, AB, B and C3.3.3. Mixed-mode Class B3.3.4. Classes of operation based on finite number of harmonics3.4. Load line and output impedance3.5. Bias circuits for HBT power amplifiers3.6. Power combiners/dividers3.6.1. Wilkinson power dividers/combiners3.6.2. Branch-line hybrid couplers3.6.3. Coupled-line directional couplersReferences 4. High-efficiency power amplifier design4.1. Class-F circuit design4.1.1. Idealized Class-F mode4.1.2. Class F with quarterwave transmission line4.1.3. Effect of saturation resistance4.1.4. Load networks with lumped and distributed parameters4.1.5. Broadband capability of Class-F power amplifiers4.2. Inverse Class F4.2.1. Idealized inverse Class-F mode4.2.2. Inverse Class F with quarterwave transmission line4.2.3. Load networks with lumped and distributed parameters4.2.4. Design examples of inverse Class-F GaN HEMT power amplifiers for cellular systems4.3. Class E with shunt capacitance4.3.1. Optimum load-network parameters4.3.2. Matching with standard load4.3.3. Effect of saturation resistance and finite switching time4.3.4. Optimum, nominal, and off-nominal Class-E operation4.3.5. Load network with transmission lines4.4. Parallel-circuit Class E4.4.1. Optimum load-network parameters4.4.2. Operation beyond maximum Class-E frequency4.4.3. Two-harmonic approximation4.4.4. Load network with transmission lines4.4.5. Power gain4.4.6. General case of Class E with finite dc-feed inductance4.5. Class E with shunt capacitance and shunt filter4.5.1. Optimum load-network parameters4.5.2. ADS simulation setup4.5.3. Load network with transmission lines4.6. Summary: magic of parallel circuits4.7. Summary: comparison of output impedances and load-network parameters4.8. Design example: two-stage high-efficiency 1.75-GHz MMIC HBT power amplifier using parallel-circuit Class-E mode4.9. Broadband Class-E power amplifiers4.9.1. Reactance compensation technique4.9.2. Reactance compensation with quarterwave line4.9.3. Broadband parallel-circuit Class E4.9.4. Broadband Class E with shunt capacitance and shunt filterReferences 5. High-efficiency oscillator design5.1. Oscillator basic structures5.2. Empirical optimum design approach5.3. Analytic optimum design approach5.3.1. Parallel and series feedback oscillators5.3.2. Optimum oscillation conditions5.3.3. Optimum MOSFET oscillator5.4. High-efficiency design techniques5.4.1. Class-C operation mode5.4.2. Class-F and inverse Class-F oscillators5.4.3. Class-E power oscillators: from RF to millimeter waves5.4.4. Load-independent Class-E power oscillator5.5. Class-E power oscillators for WPT systems5.6. Design example: parallel-circuit Class-E oscillator for compact fluorescent lampsReferences 6. High-efficiency Doherty amplifiers6.1. Conventional Doherty architecture6.1.1. Basic structures6.1.2. Operation principles6.1.3. Offset lines6.2. Asymmetric Doherty amplifiers6.3. Multistage Doherty amplifiers6.3.1. Three-stage structure6.3.2. Four-stage architecture (Doherty-in-Doherty)6.4. Inverted Doherty amplifiers6.5. Three-way inverted Doherty amplifier with enhanced backoff region6.6. Integrated and monolithic Doherty amplifiers6.6.1. Equivalent circuits with lumped elements and transmission6.6.2. Integrated Doherty amplifiers6.6.3. Monolithic Doherty amplifiers6.7. Multiband and broadband capability6.7.1. Dual-band parallel Doherty architecture6.7.2. Tri-band inverted Doherty configuration6.8. Design example: high-power 3.4-3.8 GHz asymmetric inverted GaN HEMT Doherty amplifier for base station applications6.9. Design examples: integrated sub-6 GHz two-stage GaN HEMT Doherty amplifiers for massive MIMO applicationsReferences 7. Mixed-mode and alternative efficiency enhancement techniques7.1. Class-FE power amplifiers7.2. Class-E/F3 power amplifiers7.2.1. Optimum load-network parameters7.2.2. Class E/F3 with lumped elements7.2.3. Class E/F3 with transmission lines7.2.4. Class E/F3 with series tank circuit and shunt filter7.2.5. Parallel-circuit Class E/F37.3. Class-E/F3 oscillators7.4. Switched-path and load-modulated balanced power amplifiers7.5. Three-way Doherty amplifier with three-coupled-line combiner7.6. Envelope tracking for cellphone applicationsReferences