Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.

"A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. … Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. … Because of its uniqueness, this book would be most likely to have a successful market. … A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems." ––Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan"The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors’ design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. … I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. … This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""––Dr. Mahmoud Al-Sa’di, Assistant Professor of Physics – Electronics, Berlin, Germany"The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."––Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, India

• Introduction to Technology CAD. Basic Semiconductor and MOS Physics. Review of Numerical Methods for TCAD. Device Simulation Using ISE-TCAD. Device Simulation Using Silvaco ATLAS Tool. Study of Deep Submicron VLSI MOSFETs through TCAD. MOSFET Characterization for VLSI Circuit Simulation. Process Simulation of a MOSFET using TSUPREM-4 and MEDICI.

Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.

"A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. … Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. … Because of its uniqueness, this book would be most likely to have a successful market. … A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems." ––Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan"The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors’ design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. … I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. … This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""––Dr. Mahmoud Al-Sa’di, Assistant Professor of Physics – Electronics, Berlin, Germany"The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."––Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, India

• Introduction to Technology CAD. Basic Semiconductor and MOS Physics. Review of Numerical Methods for TCAD. Device Simulation Using ISE-TCAD. Device Simulation Using Silvaco ATLAS Tool. Study of Deep Submicron VLSI MOSFETs through TCAD. MOSFET Characterization for VLSI Circuit Simulation. Process Simulation of a MOSFET using TSUPREM-4 and MEDICI.

Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.

"A unique book combines both device and process simulation so far as I know. It combines principle and practice together and thus is quite suitable for use in classroom or as a self-study reference. It exposes the reader to the realm of device and process simulation, a field being critical important in VLSI but not easily being accessible to the reader due to the lack of comprehensive material available. … Yes, I would like to read this book. Even though I do not teach such a course directly, my yearly VLSI course indeed covers a chapter related to the VLSI manufacturing process and another to device modeling. This book definitely gives much more insight into these. It will give me a thorough understanding of these two important topics. … Because of its uniqueness, this book would be most likely to have a successful market. … A unique book combines both device and process simulation. It is an excellent resource for both the student and professional to these essential topics related to VLSI systems." ––Ming-Bo Lin, Department of Electronic Engineering of National Taiwan University of Science and Technology, Taipei, Taiwan"The materials provided bring up-to-date various aspects of TCAD simulation of VLSI MOSFETs, through providing an overview of TCAD software tools and the physical models included. It highlights the role and importance of TCAD tools in the development and prediction of VLSI MOS transistors’ design, characterization and fabrication. The materials comprise detailed examples with source codes of different types of MOSFETs using Silvaco TCAD device simulation tools, illustrating the key aspects of Silvaco TCAD tools and showing its capability and effectiveness to understand the physical behavior and potential of a device structure. In addition, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. This approach serves the purpose of the book which is to be tended for students of electrical and electronics engineering disciplines. The book is ideal for students and may also be used as a reference for researchers and professionals working in the area of electronic devices. … I am confident that the materials presented serve the purpose of this book quite well, and provide the target audience with a good reference on TCAD Simulation for VLSI MOSFET. … This book does an excellent job in providing the target audience with a comprehensive knowledge and the systematic approach for the design, characterization and fabrication of VLSI MOS transistors using TCAD tools. The book provides a practical and an easy way to gain an understanding of the fundamental physics and mathematics involved with TCAD tools. The book comprises detailed examples with source codes of different types of MOSFETs using TCAD device simulation tools so one can easily understand what is going on. Moreover, the book presents a comprehensive overview of compact modeling of MOS transistors for use in VLSI circuit simulation. If you are using or going to use TCAD software for VLSI MOSFET devices design and analysis, this is the book for you.""––Dr. Mahmoud Al-Sa’di, Assistant Professor of Physics – Electronics, Berlin, Germany"The editor is correct in the assessment that any course related to TCAD simulation introducing the 'IC chain' commercial tools has to be through user manuals which is not very practical for class room teaching. Therefore, there seems to be a strong case for a text which can navigate students/researchers/professionals through various simulation phases systematically illustrating simulation principles, TCAD tool usages with judiciously selected case studies. 2. The authors involved are mostly known users of TCAD tools of Silvaco and are therefore competent to undertake the task."––Professor A. B. Bhattacharyya, Jaypee Institute of Information Technology, Noida, India

• Introduction to Technology CAD. Basic Semiconductor and MOS Physics. Review of Numerical Methods for TCAD. Device Simulation Using ISE-TCAD. Device Simulation Using Silvaco ATLAS Tool. Study of Deep Submicron VLSI MOSFETs through TCAD. MOSFET Characterization for VLSI Circuit Simulation. Process Simulation of a MOSFET using TSUPREM-4 and MEDICI.