III-Nitride Semiconductors

Omar Manasreh is the Series Editor of OptoelectronicProperties of Semiconductors and Superlattices. He is a Professor of Electrical and Computer Engineering at the University of New Mexico. He has extensive experience in the experimental and theoretical optoelectronic properties of III-V semiconductors, superlattices and related devices. In particular, his recent work is focused on optoelectronic devices such as near, mid-, and long-wavelength infrared detectors, as well as UV detectors based on III-nitrides for optical communications.Dr. Ian Ferguson joined Georgia tech from Emcore Corporation where he served as a Director of Research. Prior to this, he worked with interdisciplinary research groups at Northwestern University in Evanston, IL and at the Imperial College in London, UK. Dr. Ferguson has a particular interest in research that involves an interdisciplinary approach that is often conducted in collaboration with industry partners. He has also been actively involved in the entrepreneurial process of establishing new companies. He is currently a Professor in the Microelectronics Group of the Georgia Tech ECE Department.

• Chapter One: Reduction of Dislocation Density in GaN Films Formed by Epitaxial Lateral OvergrowthChapter Two: Lateral and Pendo-Epitaxial Growth and Characterization of Thin Films of GaN and AIGaN Alloys on SIC(0001) and Si(111) SubstratesChapter Three: Spatially Resolved Optical Characterization of GaN Structures Produced by Selective Area Epitaxy and Epitaxial Lateral OvergrowthChapter Four: Selective Area Growth of Gallium Nitride on ?-AI2O3 and Silicon Substrates Using Oxidized Aluminum ArsenideChapter Five: Homo and Hetero-Epitaxial MOVPE Growth of GaNChapter Six: Hydride Vapour Phase Epitaxial Growth of Thick GaN LayersChapter Seven: Growth Modes and Strain Relaxation Mechanisms of Nitrides in Molecular Beam Epitaxy: From 2D to 3D Growth ModeChapter Eight: Molecular Beam Epitaxy of Group-III NitridesChapter Nine: "Growth and Characterization of MBE-grown Cubic GaN, InxGa1-xN and AIyGa1-yN"Chapter Ten: Growth of III_V Nitrides by Pulsed Laser DepositionChapter Eleven: Influence of the Growth Mode on the physical Properties of GaN Grown by MetalOrganic Vapor Phase EpitaxyChapter Twelve: Epitaxial Growth and Characterization of GaN-based Nitrides and Related Devices on Silicon SubstratesChapter 13: Metalorganic Vapor Phase Change Epitaxy Grown Hexagonal GaN and AIGaN for UV-Visible-Blind Photodetector Device ApplicationsChapter 14: Epitaxial Growth of Wurtzite GaN and Ternary Compounds