Integrated Lasers on Silicon

Charles Cornet received the Ph.D. degree in physics from Institut National des Sciences Appliquées, Rennes, France, in 2006 for his contribution to the understanding of electronic, optical and dynamic properties of coupled self-assembled InAs/InP quantum dots. Since 2007, he is Assistant Professor at FOTON laboratory, specialist of MBE material growth, structural and optical properties of III-V semiconductor nanostructures and devices, and their integration on silicon. In 2014, he received his “habilitation à diriger les recherches” for his contribution to the development of pseudomorphic integration of III-V semiconductors and devices on silicon, and became head of the “optical communications: devices and functionalities” research program at FOTON laboratory. Yoan Léger received the PhD degree in Physics from Université Joseph Fourier, Grenoble, France, in 2007 for his investigation of the optoelectronic properties of individual II-VI magnetic quantum dots and the demonstration of the optical detection of a single magnetic atom spin in the solid state. He then joined B. Deveaud’s group in EPFL (Switzerland) and focused his work on the nonlinear properties of semiconductor microcavities in the strong coupling regime, from polariton multistability and all-optical spin switching to superfluidity. Since 2012, hehas worked as a CNRS researcher in Foton laboratory on the monolithic integration of nonlinear and active photonic micro-resonators on silicon. Dr. Léger is the co-author of 60 publications, counting more than 1100 citations. He is a reviewer for Nature publishing group, the Optical Society and the American Physical Society. Cédric Robert obtained a PhD in physics and optoelectronics at INSA Rennes (France) where he studied nanostructures on GaP for the monolithic integration of a laser structure on silicon. He then moved to the III-V materials and devices group of the Tyndall National Institute (Ireland) where he designed, fabricated and characterized optoelectronics devices based on III-V compounds. In particular, he developed III-V light emitters that are transfer printed onto silicon substrates. He joined the Laboratory of Physics and Chemistry of Nano-objects (LPCNO) in INSA Toulouse to study the optical properties of semiconducting transition metal dichalcogenide monolayers (MoS2, WS2, MoSe2, WSe2, MoTe2). He authored or co-authored 20 papers in top ranked journals.

• 1: Laser Integration Challenges2: Group IV Silicon Lasers3: III–V Lasers Bonded on Si4: Monolithic III–V Lasers on Silicon5: Laser Architectures for On-chip Information Technologies