Highly Integrated Gate Drivers for Si and GaN Power Transistors

Achim Seidel was born in Stuttgart, Germany, 1986. He received his B.Eng. degree in mechatronics/electrical engineering from the University of Applied Sciences Esslingen, Esslingen, Germany, in 2010. In 2012, he received the M.Sc. degree from Reutlingen University, Reutlingen, Germany. Between 2012 and 2019, Achim Seidel was working as a research assistant at the Robert Bosch Center for Power Electronics at Reutlingen University, Reutlingen, Germany. He received the Ph.D. degree (Summa Cum Laude) from Leibniz University Hannover, Germany, in 2020. Since 2019, he is a hardware developer for ebike chargers at the Robert Bosch GmbH in Reutlingen, Germany.Bernhard Wicht has 20+ years of experience in analog and power management IC design. He received the Dipl.-Ing. degree in electrical engineering from University of Technology Dresden, Germany, in 1996 and the Ph.D. degree (Summa Cum Laude) from University of Technology Munich, Germany, in 2002. Between 2003 and 2010, he was with Texas Instruments, Freising, responsible for the design of automotive power management ICs. In September 2010, he became a full professor for integrated circuit design and a member of the Robert Bosch Center for Power Electronics at Reutlingen University, Germany. Since April 2017, he has been heading the Chair for Mixed-Signal IC Design at Leibniz University Hannover, Germany. His research interest includes IC design with focus on power management, gate drivers and high-voltage ICs. Dr. Wicht was co-recipient of the 2015 ESSCIRC Best Paper Award and of the 2019 First Prize Paper Award of the IEEE Journal of Emerging and Selected Topics in Power Electronics. In 2018, he received the faculty award for excellent teaching at his university. He invented seventeen patents with several more pending. He is currently a member of the Technical Program Committee of ISSCC and he is also a Distinguished Lecturer of the IEEE Solid-State Circuits Society.

• Chapter 1. Introduction.- Chapter 2. Fundamentals.- Chapter 3. Gate Drivers Based on High-Voltage Charge Storing (HVCS).- Chapter 4. Gate Drivers Based on High-Voltage Energy Storing (HVES).- Chapter 5. Gate Drivers for Large Gate Loops Based on HVES.- Chapter 6. Outlook and FutureWork.- Chapter 7. Conclusion.