Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song’s group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.

• Acknowledge.- Abstract.- Introduction.- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials.- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials.- Optimization Component Ti0.43Sb2Te3.- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device.- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy.- Ti0.43Sb2Te3 Based Phase Change Memory Chip.- Summary.- References.- Published Papers and Patents.- Bibliography.