Cungang Hu (Senior Member, IEEE) received the B.S. degree in electrical engineering and automation from Electronic Engineering Institute, Hefei, China, in 2001, and the M.S. degree in detection technique and automatic device and the Ph.D. degree in power electronics and electric drives from the Hefei University of Technology, Hefei, China, in 2004 and 2008, respectively. From 2004 to 2013, he was with the Hefei University of Technology. Since 2013, he has been a Professor with Anhui University, Hefei, China. He is also a Research Fellow with the National Engineering Laboratory of Energy-Saving Motor and Control Technique, China, Power Quality Engineering Research Center of China, Ministry of Education, and Hefei Energy-Saving Research Institute. His research interests include multilevel converter technology, new energy power generation technology, power quality, and microgrid. He is the Technical Program Committee Chairman of the 11th and 14th IEEE Conference on Industrial Electronics and Applications, the General Chair of the 12th IEEE Conference on Industrial Electronics and Applications, and the Special Session Chairman of the 46th Annual Conference of the IEEE Industrial Electronics Society

• Study on the Influence of Parasitic Parameters on the Switching Characteristics and High Frequency Oscillation of SiC MOSFET.- A DSRD-based Trigger Circuit for RBDT.- Deformation analysis of press-pack IGBT using thermal mechanical coupling method.

Cungang Hu (Senior Member, IEEE) received the B.S. degree in electrical engineering and automation from Electronic Engineering Institute, Hefei, China, in 2001, and the M.S. degree in detection technique and automatic device and the Ph.D. degree in power electronics and electric drives from the Hefei University of Technology, Hefei, China, in 2004 and 2008, respectively. From 2004 to 2013, he was with the Hefei University of Technology. Since 2013, he has been a Professor with Anhui University, Hefei, China. He is also a Research Fellow with the National Engineering Laboratory of Energy-Saving Motor and Control Technique, China, Power Quality Engineering Research Center of China, Ministry of Education, and Hefei Energy-Saving Research Institute. His research interests include multilevel converter technology, new energy power generation technology, power quality, and microgrid. He is the Technical Program Committee Chairman of the 11th and 14th IEEE Conference on Industrial Electronics and Applications, the General Chair of the 12th IEEE Conference on Industrial Electronics and Applications, and the Special Session Chairman of the 46th Annual Conference of the IEEE Industrial Electronics Society

• Study on the Influence of Parasitic Parameters on the Switching Characteristics and High Frequency Oscillation of SiC MOSFET.- A DSRD-based Trigger Circuit for RBDT.- Deformation analysis of press-pack IGBT using thermal mechanical coupling method.

Cungang Hu (Senior Member, IEEE) received the B.S. degree in electrical engineering and automation from Electronic Engineering Institute, Hefei, China, in 2001, and the M.S. degree in detection technique and automatic device and the Ph.D. degree in power electronics and electric drives from the Hefei University of Technology, Hefei, China, in 2004 and 2008, respectively. From 2004 to 2013, he was with the Hefei University of Technology. Since 2013, he has been a Professor with Anhui University, Hefei, China. He is also a Research Fellow with the National Engineering Laboratory of Energy-Saving Motor and Control Technique, China, Power Quality Engineering Research Center of China, Ministry of Education, and Hefei Energy-Saving Research Institute. His research interests include multilevel converter technology, new energy power generation technology, power quality, and microgrid. He is the Technical Program Committee Chairman of the 11th and 14th IEEE Conference on Industrial Electronics and Applications, the General Chair of the 12th IEEE Conference on Industrial Electronics and Applications, and the Special Session Chairman of the 46th Annual Conference of the IEEE Industrial Electronics Society

• Study on the Influence of Parasitic Parameters on the Switching Characteristics and High Frequency Oscillation of SiC MOSFET.- A DSRD-based Trigger Circuit for RBDT.- Deformation analysis of press-pack IGBT using thermal mechanical coupling method.