Nanocrystals in Nonvolatile Memory

Writam Banerjee is assistant professor in the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, since 2014. He completed his BSc and MSc in physics from Vidyasagar University, West Bengal, India. He received his PhD in electronic engineering from Chang Gung University, Taiwan. Dr. Banerjee has been a visiting scientist at PGI-7, Forschungszentrum Jülich GmbH, Germany, during 2012–2013 and has led its joint project with Intel Corporation, California, USA, on the development of resistive memory. He was also engaged in the development of nano-crossbar resistive random-access memory (RRAM) devices and their integration with transistors, a project in collaboration with IMEC, Belgium. He has authored and co-authored over 30 publications in reputed international journals and over 50 publications in conference proceedings. His current research interests include the novel high-k nanocrystals; design, fabrication, characterization, and analysis of RRAM, VRRAM, crossbar memory, and storage class memory; and high-density nanoscale 3D memory devices.

• Nanocrystal Materials, Fabrication, and Characterizations. Modeling and Simulation of Nanocrystal Flash Memory. Charge Trapping and High-k Nanocrystal Flash Memory. Silicon Nanocrystal Flash Memory. Synthesis, Characterization and Memory Application of Germanium Nanocrystals in Dielectric Matrices. Nanographene Flash Memory. Data Recovery of Flash Memory. Nanocrystals in Resistive Random Access Memory. Measurements Aspects of Nonvolatile Memory.