Wide Bandgap Semiconductors – serie

This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices.This book consists of 12 chapters, mainly presenting the authors’ own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics.

This book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and device application trend of Quasi van der Waals Epitaxy growth of nitride on 2D materials. It also discusses the future development of nitride material growth and device application together in the field. It is hoped that the publication of this book presents the frontier development status and prospect of nitride growth and application to personnel in related fields, hoping to bring more thinking and generate positive innovation points to readers.

This book’s purpose and characteristics are not only to introduce the fundamental theoretical knowledge of nuclear radiation detection principles, detector preparation, and detection signal generation, but also provides a comprehensive introduction of the design, optimization, and preparation of semiconductor nuclear radiation detection. Beginning with the current materials and device processes of wide band gap semiconductors, the book focuses on the challenges and essential technologies of detector design, optimization, and preparation. The book also provides theoretical support for device design optimization and device failure analysis through the introduction of detector simulation models that integrate simulation results with experimental data.

Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points.

This book covers the rapidly developing field of AlN research and some of its technical applications. In this book, the development of aluminium nitride from single crystal growth to device applications is comprehensively presented. Single crystal AlN growth includes bulk single crystal growth, single crystal thick film growth and single crystal thin film growth involving physical vapor deposition technology, hydride vapor phase epitaxy and metal-organic chemical vapor deposition technology. In terms of devices, AlN basic UV LED and power electronics devices are discussed. This book can provide researchers, engineers and graduate students with a wealth of new discoveries, results, information and knowledge in the field of AlN single crystal materials.